Abstract
Since about 1985, MOS technologies have gained the most significant economic importance for the production of digital and also analogue integrated circuits. Simple PMOS and NMOS metal gate processes for field effect transistor integration are explained first. The transistion to self-aligned polysilicon gate processes for minimum feature sizes down to 1.5 µm enables higher switching frequencies, whereas the CMOS technique reduces the power consumption of integrated circuits.
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References
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Hilleringmann, U. (2023). MOS Technologies for Circuit Integration. In: Silicon Semiconductor Technology. Springer Vieweg, Wiesbaden. https://doi.org/10.1007/978-3-658-41041-4_10
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DOI: https://doi.org/10.1007/978-3-658-41041-4_10
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