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Article
Structural state of III nitride layers implanted with erbium ions
The defect structure of AlGaN/GaN superlattices and GaN layers grown through vapor-phase epitaxy from organometallic compounds is investigated using x-ray diffraction analysis before and after implantation wit...
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Article
The defect structure of AlGaN/GaN superlattices grown on sapphire by the MOCVD method
High-resolution x-ray diffractometry and electron microscopy are used to study the defect structure and relaxation mechanism of elastic stresses in AlGaN/GaN superlattices grown by the MOCVD method on sapphire...
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Article
Heteropolytype structures with SiC quantum dots
Epitaxial silicon carbide layers of 3C-SiC polytype with an array of nanodimensional SiC quantum dots (QDs) have been obtained for the first time using an improved method of sublimation epitaxy in vacuum. The ...
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Article
GaN films grown by vapor-phase epitaxy in a hydride-chloride system on Si(111) substrates with AlN buffer sublayers
Oriented GaN layers with a thickness of about 10 μm have been grown by hydride-chloride vaporphase epitaxy (HVPE) on Si(111) substrates with AlN buffer layers. The best samples are characterized by a halfwidth...
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Article
Structure, impurity composition, and photoluminescence of mechanically polished layers of single-crystal silicon
The introduction of optically active defects (such as atomic clusters, dislocations, precipitates) into a silicon single crystal using irradiation, plastic deformation, or heat treatment has been considered a ...
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Article
Synthesis and structural characterization of a heterocomposition based on porous layers of SiC polytypes
We have studied the structure of transverse cross sections of a heterocomposition consisting of porous layers of silicon carbide polytypes (substrate 6H-SiC/por-6H-SiC/epi-3C-SiC/por-3C-SiC). The epitaxial lay...
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Article
The formation of β-FeSi2 precipitates in microcrystalline Si
The formation of β-FeSi2 precipitates was observed for the first time in microcrystalline Si films. The Fe-doped amorphous Si films (a-Si:Fe) were obtained using magnetron sputtering. Subsequent short-time therma...
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Article
Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate
Transverse sections of the (11–20) cuts of a 6H-SiC substrate-porous SiC layer-epitaxial 6H-SiC layer structure were studied using electron microscopy. An intermediate layer is revealed between pores and unetc...
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Article
Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions
The structure of (p)3C-SiC-(n)6H-SiC epitaxial structures obtained by sublimation epitaxy in vacuum on 6H-SiC substrates was studied by methods of X-ray topography, X-ray diffraction, and transmission electron mi...
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Article
Specific properties of the PZT-based thin-film capacitor structures with excess lead oxide
The effect of excess lead oxide on the microstructure and ferroelectric properties of lead zirconate titanate (PZT) films was studied in PZT-based thin-film capacitor structures. It is shown that excess lead i...
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Article
Microstructure of bulk GaN layer grown on sapphire substrates with amorphous buffer
The structure of bulk GaN layers grown on (0001) sapphire substrates by vapor-phase epitaxy has been studied by x-ray diffraction and transmission electron microscopy (TEM). It is found that these layers conta...
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Article
Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements
Two-and three-crystal diffractometric study of the structural perfection of GaN epitaxial films grown on sapphire, GaAs, and SiC substrates is reported. The diffraction intensity distributions around the recip...
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Article
Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them
The decrease in the density of dangling silicon-silicon bonds in a-Si:H films as a result of annealing in an atomic-hydrogen atmosphere is determined by their density in the initial (nonannealed) film. The change...