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  1. No Access

    Article

    Fabrication of improved-quality seed crystals for growth of bulk silicon carbide

    Sublimation epitaxy in a vacuum has been used to grow silicon carbide layers with a low defect concentration and with SiC wafers cut from single-crystal ingots produced by the modified Lely method serving as s...

    M. G. Mynbaeva, P. L. Abramov, A. A. Lebedev, A. S. Tregubova… in Semiconductors (2011)

  2. No Access

    Article

    Studying edge luminescence of n-3C-SiC epilayers grown on 6H-SiC substrates

    Epitaxial films of cubic silicon carbide (n-3C-SiC) polytype grown on hexagonal (6H-SiC) polytype substrates by sublimation epitaxy in vacuum have been studied. The films of the best structural quality exhibit lo...

    A. A. Lebedev, P. L. Abramov, E. V. Bogdanova, S. P. Lebedev… in Technical Physics Letters (2010)

  3. No Access

    Article

    Use of sublimation epitaxy for obtaining volume 3C-SiC crystals

    It is demonstrated that polytype-homogeneous, thick (>100 μm) epitaxial 3C-SiC layers of good structural quality with diameters of no less than 25 mm can be grown on 6H-SiC substrates by sublimation epitaxy in...

    A. A. Lebedev, P. L. Abramov, A. S. Zubrilov, E. V. Bogdanova… in Technical Physics Letters (2010)

  4. No Access

    Article

    Optimization of structural perfection of 4H-polytype silicon carbide ingots

    The degree of structural perfection of 4H-polytype silicon carbide ingots grown by the modified Lely method was improved using a multistage process with sequential change in the seed orientation (similar to the p...

    D. D. Avrov, S. I. Dorozhkin, A. O. Lebedev, Yu. M. Tairov… in Semiconductors (2009)

  5. No Access

    Article

    Study of the 3C-SiC layers grown on the 15R-SiC substrates

    The 3C-SiC layers grown on the 15R-SiC substrates by sublimation epitaxy in vacuum are studied. Using X-ray topography and Raman spectroscopy, it is shown that the obtained layers are of a rather high structural ...

    A. A. Lebedev, P. L. Abramov, E. V. Bogdanova, A. S. Zubrilov… in Semiconductors (2009)

  6. No Access

    Article

    Metal-insulator transition in n-3C-SiC epitaxial films

    n-Type 3C-SiC films have been grown by sublimation epitaxy on hexagonal silicon carbide substrates. The low-temperature conductivity and magnetoresistance of the films have been studied i...

    A. A. Lebedev, P. L. Abramov, N. V. Agrinskaya, V. I. Kozub… in Semiconductors (2009)

  7. No Access

    Article

    Structural peculiarities of 4H-SiC irradiated by Bi ions

    X-ray diffraction, photoluminescence, micro-cathodoluminescence, and scanning and transmission electron spectroscopy were used to study the 710 MeV Bi ion irradiation effect in the fluence range of 1.4 × 109−5 × ...

    E. V. Kalinina, V. A. Skuratov, A. A. Sitnikova, E. V. Kolesnikova… in Semiconductors (2007)

  8. No Access

    Article

    A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum

    3C-SiC epitaxial layers with a thickness of up to 100 µm were grown on 6H-SiC hexagonal substrates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3–0.5 cm2 and uncompen...

    A. A. Lebedev, V. V. Zelenin, P. L. Abramov, E. V. Bogdanova… in Semiconductors (2007)

  9. No Access

    Article

    A study of n +-6H/n-3C/p +-6H-SiC heterostructures grown by sublimation epitaxy

    The n +-6H/n-3C/p +-6H-SiC structure was fabricated for the first time by sublimation epitaxy, with mesa diodes formed on its base and their electrical characterist...

    A. A. Lebedev, A. M. Strel’chuk, S. Yu. Davydov, A. E. Cherenkov… in Semiconductors (2006)

  10. No Access

    Article

    Heteropolytype structures with SiC quantum dots

    Epitaxial silicon carbide layers of 3C-SiC polytype with an array of nanodimensional SiC quantum dots (QDs) have been obtained for the first time using an improved method of sublimation epitaxy in vacuum. The ...

    A. A. Lebedev, V. N. Petrov, A. N. Titkov, L. M. Sorokin… in Technical Physics Letters (2005)

  11. No Access

    Article

    X-ray studies of Si1−x Gex single crystals

    Structural imperfections were studied in Si1−x Gex (1–9 at. % Ge) solid-solution single crystals grown using the Czochralski method. The studies were performed using x-ray diffraction topography with laboratory a...

    T. S. Argunova, M. Yu. Gutkin, A. G. Zabrodskii… in Physics of the Solid State (2005)

  12. No Access

    Article

    Synthesis and structural characterization of a heterocomposition based on porous layers of SiC polytypes

    We have studied the structure of transverse cross sections of a heterocomposition consisting of porous layers of silicon carbide polytypes (substrate 6H-SiC/por-6H-SiC/epi-3C-SiC/por-3C-SiC). The epitaxial lay...

    L. M. Sorokin, G. N. Mosina, A. S. Tregubova, A. A. Lebedev… in Technical Physics Letters (2004)

  13. No Access

    Article

    3C-SiC p-n structures grown by sublimation on 6H-SiC substrates

    Sublimation epitaxy in a vacuum has been employed to grow n-and p-type 3C-SiC layers on 6H-SiC substrates. Diodes have been fabricated on the basis of the p-n structure obtained, and their parameters have been st...

    A. A. Lebedev, A. M. Strel’chuk, D. V. Davydov, N. S. Savkina… in Semiconductors (2003)

  14. No Access

    Article

    Investigation of the p −-3C-SiC/n +-6H-SiC heterostructures with modulated do**

    A heterostructure of the p −-3C-SiC/n +-6H-SiC type with modulated do** was synthesized by sublimation epitaxy in vacuum. Features of the current-voltage characteristics and the electroluminescence spectra show...

    A. A. Lebedev, A. M. Strel’chuk, N. S. Savkina… in Technical Physics Letters (2002)

  15. No Access

    Article

    Structure and properties of silicon carbide grown on porous substrate by vacuum sublimation epitaxy

    A SiC layer was grown by vacuum sublimation epitaxy on porous silicon carbide. A porous SiC layer about 10 µm thick was fabricated by electrochemical etching of an off-axis 6H-SiC substrate. The epitaxial layer w...

    N. S. Savkina, V. V. Ratnikov, A. Yu. Rogachev, V. B. Shuman… in Semiconductors (2002)

  16. No Access

    Article

    Effect of structural imperfection on the spectrum of deep levels in 6H-SiC

    Spectra of deep centers in a lightly doped 6H-SiC substrate having regions with different degrees of structural perfection were investigated. It is found that the concentrations of the majority of deep centers ar...

    A. A. Lebedev, D. V. Davydov, A. S. Tregubova, E. V. Bogdanova… in Semiconductors (2001)

  17. No Access

    Article

    Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions

    The structure of (p)3C-SiC-(n)6H-SiC epitaxial structures obtained by sublimation epitaxy in vacuum on 6H-SiC substrates was studied by methods of X-ray topography, X-ray diffraction, and transmission electron mi...

    A. A. Lebedev, G. N. Mosina, I. P. Nikitina, N. S. Savkina… in Technical Physics Letters (2001)

  18. No Access

    Article

    Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum

    The parameters of deep-level centers in lightly doped 4H-SiC epilayers grown by sublimational epitaxy and CVD were investigated. Two deep-level centers with activation energies E c ...

    A. A. Lebedev, D. V. Davydov, N. S. Savkina, A. S. Tregubova… in Semiconductors (2000)

  19. No Access

    Article

    Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum

    The structural perfection of silicon carbide substrates and homoepitaxial layers grown on the substrates by sublimation has been studied by x-ray diffraction (topography and diffractometry) and optical microsc...

    L. M. Sorokin, A. S. Tregubova, M. P. Shcheglov… in Physics of the Solid State (2000)

  20. No Access

    Article

    Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

    We investigated silicon carbide (SiC) epitaxial layers grown by liquid phase epitaxy (LPE). The layers were grown on 6H-SiC and 4H-SiC well-oriented (0001) 35 mm diameter commercial wafers as well as on 6H-SiC...

    S. V. Rendakova, I. P. Nikitina, A. S. Tregubova… in Journal of Electronic Materials (1998)

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