Abstract
We have studied the structure of transverse cross sections of a heterocomposition consisting of porous layers of silicon carbide polytypes (substrate 6H-SiC/por-6H-SiC/epi-3C-SiC/por-3C-SiC). The epitaxial layer of 3C-SiC polytype (epi-3C-SiC) was grown by sublimation in vacuum on the surface of a porous 6H-SiC sublayer (por-6H-SiC) obtained by electrochemical etching of a 6H-SiC substrate. The boundary between the 3C-SiC epilayer and the porous 6H-SiC sublayer contains no defective transition layer, and the 3C-SiC epilayer is free of dislocations.
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Translated from Pis’ma v Zhurnal Tekhnichesko\({{P_{As_4 } } \mathord{\left/ {\vphantom {{P_{As_4 } } {P_{Ga} }}} \right. \kern-\nulldelimiterspace} {P_{Ga} }} = \gamma \) Fiziki, Vol. 30, No. 22, 2004, pp. 44–52.
Original Russian Text Copyright © 2004 by Sorokin, Mosina, Tregubova, Lebedev, Savkina, Shuman.
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Sorokin, L.M., Mosina, G.N., Tregubova, A.S. et al. Synthesis and structural characterization of a heterocomposition based on porous layers of SiC polytypes. Tech. Phys. Lett. 30, 950–953 (2004). https://doi.org/10.1134/1.1829352
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DOI: https://doi.org/10.1134/1.1829352