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  1. No Access

    Article

    Structural state of III nitride layers implanted with erbium ions

    The defect structure of AlGaN/GaN superlattices and GaN layers grown through vapor-phase epitaxy from organometallic compounds is investigated using x-ray diffraction analysis before and after implantation wit...

    R. N. Kyutt, N. A. Sobolev, G. N. Mosina, E. I. Shek in Physics of the Solid State (2006)

  2. No Access

    Article

    The defect structure of AlGaN/GaN superlattices grown on sapphire by the MOCVD method

    High-resolution x-ray diffractometry and electron microscopy are used to study the defect structure and relaxation mechanism of elastic stresses in AlGaN/GaN superlattices grown by the MOCVD method on sapphire...

    R. N. Kyutt, G. N. Mosina, M. P. Shcheglov, L. M. Sorokin in Physics of the Solid State (2006)

  3. No Access

    Article

    Heteropolytype structures with SiC quantum dots

    Epitaxial silicon carbide layers of 3C-SiC polytype with an array of nanodimensional SiC quantum dots (QDs) have been obtained for the first time using an improved method of sublimation epitaxy in vacuum. The ...

    A. A. Lebedev, V. N. Petrov, A. N. Titkov, L. M. Sorokin… in Technical Physics Letters (2005)

  4. No Access

    Article

    GaN films grown by vapor-phase epitaxy in a hydride-chloride system on Si(111) substrates with AlN buffer sublayers

    Oriented GaN layers with a thickness of about 10 μm have been grown by hydride-chloride vaporphase epitaxy (HVPE) on Si(111) substrates with AlN buffer layers. The best samples are characterized by a halfwidth...

    V. N. Bessolov, V. Yu. Davydov, Yu. V. Zhilyaev… in Technical Physics Letters (2005)

  5. No Access

    Article

    Structure, impurity composition, and photoluminescence of mechanically polished layers of single-crystal silicon

    The introduction of optically active defects (such as atomic clusters, dislocations, precipitates) into a silicon single crystal using irradiation, plastic deformation, or heat treatment has been considered a ...

    R. I. Batalov, R. M. Bayazitov, N. M. Khusnullin… in Physics of the Solid State (2005)

  6. No Access

    Article

    Synthesis and structural characterization of a heterocomposition based on porous layers of SiC polytypes

    We have studied the structure of transverse cross sections of a heterocomposition consisting of porous layers of silicon carbide polytypes (substrate 6H-SiC/por-6H-SiC/epi-3C-SiC/por-3C-SiC). The epitaxial lay...

    L. M. Sorokin, G. N. Mosina, A. S. Tregubova, A. A. Lebedev… in Technical Physics Letters (2004)

  7. No Access

    Article

    The formation of β-FeSi2 precipitates in microcrystalline Si

    The formation of β-FeSi2 precipitates was observed for the first time in microcrystalline Si films. The Fe-doped amorphous Si films (a-Si:Fe) were obtained using magnetron sputtering. Subsequent short-time therma...

    E. I. Terukov, O. I. Kon’kov, V. Kh. Kudoyarova, O. B. Gusev… in Semiconductors (2002)

  8. No Access

    Article

    Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate

    Transverse sections of the (11–20) cuts of a 6H-SiC substrate-porous SiC layer-epitaxial 6H-SiC layer structure were studied using electron microscopy. An intermediate layer is revealed between pores and unetc...

    L. M. Sorokin, N. S. Savkina, V. B. Shuman, A. A. Lebedev… in Technical Physics Letters (2002)

  9. No Access

    Article

    Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions

    The structure of (p)3C-SiC-(n)6H-SiC epitaxial structures obtained by sublimation epitaxy in vacuum on 6H-SiC substrates was studied by methods of X-ray topography, X-ray diffraction, and transmission electron mi...

    A. A. Lebedev, G. N. Mosina, I. P. Nikitina, N. S. Savkina… in Technical Physics Letters (2001)

  10. No Access

    Article

    Specific properties of the PZT-based thin-film capacitor structures with excess lead oxide

    The effect of excess lead oxide on the microstructure and ferroelectric properties of lead zirconate titanate (PZT) films was studied in PZT-based thin-film capacitor structures. It is shown that excess lead i...

    V. P. Afanas’ev, G. N. Mosina, A. A. Petrov, I. P. Pronin… in Technical Physics Letters (2001)

  11. No Access

    Article

    Microstructure of bulk GaN layer grown on sapphire substrates with amorphous buffer

    The structure of bulk GaN layers grown on (0001) sapphire substrates by vapor-phase epitaxy has been studied by x-ray diffraction and transmission electron microscopy (TEM). It is found that these layers conta...

    V. V. Bel’kov, Yu. V. Zhilyaev, G. N. Mosina, S. D. Raevskii… in Physics of the Solid State (2000)

  12. No Access

    Article

    Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements

    Two-and three-crystal diffractometric study of the structural perfection of GaN epitaxial films grown on sapphire, GaAs, and SiC substrates is reported. The diffraction intensity distributions around the recip...

    R. N. Kyutt, V. V. Ratnikov, G. N. Mosina, M. P. Shcheglov in Physics of the Solid State (1999)

  13. No Access

    Article

    Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them

    The decrease in the density of dangling silicon-silicon bonds in a-Si:H films as a result of annealing in an atomic-hydrogen atmosphere is determined by their density in the initial (nonannealed) film. The change...

    M. M. Mezdrogina, A. V. Abramov, G. N. Mosina, I. N. Trapeznikova… in Semiconductors (1998)

  14. No Access

    Article

    Structural Studies of Epitaxial CdF2 Layers on Si(111)

    Epitaxial CdF2 layers, which may be used in light-emitting devices integrated with silicon, were grown by Molecular Beam Epitaxy (MBE). Characterization of the layers by Rutherford Backscattering Spectroscopy (RB...

    A. Yu. Khilko, R. N. Kyutt, G. N. Mosina, N. S. Sokolov… in MRS Online Proceedings Library (1996)