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  1. No Access

    Article

    Silicon Light-Emitting Diodes with Dislocation-Related Luminescence Fabricated with Participation of Oxygen Precipitates

    Silicon light-emitting diodes with dislocation-related electroluminescence have been studied at room temperature. For the fabrication of the light-emitting diode structures, a well-known method for the formati...

    N. A. Sobolev, A. E. Kalyadin, K. F. Shtel’makh, P. N. Aruev… in Semiconductors (2023)

  2. No Access

    Article

    The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates

    Effect of the pump power on the photoluminescence intensity for dislocation-related luminescence centers is studied in p-type silicon containing oxygen precipitates. Oxygen precipitates are induced as a result of...

    N. A. Sobolev, A. E. Kalyadin, K. F. Shtel’makh, E. I. Shek… in Semiconductors (2023)

  3. No Access

    Article

    Temperature Dependence of Dislocation-Related Electroluminescence in Silicon Light-Emitting Diodes Containing Oxygen Precipitates

    electroluminescence has been studied in silicon light-emitting diodes containing oxygen precipitates at temperatures of 40–300 K. Oxygen ion implantation and multistage anneals are used for fabrication of the ...

    N. A. Sobolev, A. E. Kalyadin, K. F. Shtel’makh, P. N. Aruev… in Semiconductors (2023)

  4. Article

    Open Access

    The Great Eurasian Natural Tract as an Object of World Importance

    The tasks of establishing an ecological network are presented, outlining some outcome of the long-term study of the Great Eurasian Natural Tract (Backbone), which is a continuous series of natural ecological s...

    N. A. Sobolev, E. A. Belonovskaya… in Herald of the Russian Academy of Sciences (2022)

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  5. No Access

    Article

    Ultra-Sensitive Magnetoelectric Sensors of Magnetic Fields for Biomedical Applications

    Composite multiferroics are materials in which electric polarization of the material is possible under the action of an external magnetic field and vice versa, a change in the magnetization of the structure wh...

    A. V. Turutin, I. V. Kubasov, A. M. Kislyuk, V. V. Kuts… in Nanobiotechnology Reports (2022)

  6. No Access

    Article

    Effect of Additional Implantation with Oxygen Ions on the Dislocation-related Luminescence in Silicon-containing Oxygen Precipitates

    Dislocation-related photoluminescence is studied in silicon wafers with and without oxygen-ion implantation after multistage heat treatment, which is used in microelectronics to form an internal getter, and fi...

    N. A. Sobolev, A. E. Kalyadin, K. F. Shtel’makh, E. I. Shek in Semiconductors (2021)

  7. No Access

    Article

    Effect of Compressive and Stretching Strains on the Dislocation Luminescence Spectrum in Silicon

    The photoluminescence of silicon strained by four-point bending at the temperature 600°C is studied. The so-called dislocation luminescence lines D1, D2, D3, and D4 are observed on both sides of the strained s...

    N. A. Sobolev, A. E. Kalyadin, O. V. Feklisova, E. B. Yakimov in Semiconductors (2021)

  8. No Access

    Article

    Extended Defects in O+-Implanted Si Layers and Their Luminescence

    The structure and luminescence properties of Czochralski-grown n-Si samples implanted with oxygen ions have been comprehensively analyzed using photoluminescence and transmission electron microscopy (TEM). A high...

    V. I. Vdovin, L. I. Fedina, A. K. Gutakovskii, A. E. Kalyadin… in Crystallography Reports (2021)

  9. No Access

    Article

    Silicon Light-Emitting Diodes with Luminescence from (113) Defects

    Silicon light-emitting diodes with luminescence associated with (113) defects are fabricated by the implantation of 350-keV oxygen ions at a dose of 3.7 × 1014 cm–2 and subsequent annealing at 700°C for 1 h in a ...

    A. E. Kalyadin, K. F. Shtel’makh, P. N. Aruev, V. V. Zabrodskii… in Semiconductors (2020)

  10. No Access

    Article

    Assessment of Peat Pollution by Heavy Metals Depending on the Depth of Occurrence

    Peat was studied in order to assess the concentrations of heavy metals in it depending on the depth of occurrence. Genetically homogeneous peat layers with occurrence depths of 0–5, 5–35, 35–85, 85–140, 140–22...

    S. A. Sypalov, A. Yu. Kozhevnikov, N. L. Ivanchenko, Yu. A. Popova… in Solid Fuel Chemistry (2020)

  11. No Access

    Article

    Direct Determination of Lead in Sea Water by High-Resolution Atomic Absorption Spectroscopy Using a Mixed Modifier Barium Nitrate–Hydrofluoric Acid

    A procedure is proposed for the direct determination of lead in sea water by electrothermal atomization high-resolution atomic absorption spectrometry. The effect of background interferences due to sea water m...

    N. A. Sobolev, N. L. Ivanchenko, A. Yu. Kozhevnikov in Journal of Analytical Chemistry (2019)

  12. No Access

    Article

    Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film

    The concentration profiles of defects produced in structures upon the implantation of nitrogen ions into GaAs epitaxial layers with an uncovered surface and that covered with an AlN film and subsequent anneali...

    N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, A. D. Bondarev… in Semiconductors (2019)

  13. No Access

    Article

    Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions

    The implantation of Czochralski-grown p-type silicon with 1-MeV germanium ions at a dose of 2.5 × 1014 cm–2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealin...

    N. A. Sobolev, O. V. Aleksandrov, V. I. Sakharov, I. T. Serenkov… in Semiconductors (2019)

  14. No Access

    Article

    Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions

    The influence exerted by the conditions of the post-implantation annealing of silicon implanted with germanium ions on how luminescence centers are formed is studied. Measurements by the technique of the Ruthe...

    N. A. Sobolev, A. E. Kalyadin, V. I. Sakharov, I. T. Serenkov, E. I. Shek… in Semiconductors (2019)

  15. No Access

    Article

    Defect Structure of GaAs Layers Implanted with Nitrogen Ions

    Structural defects formed in epitaxial GaAs layers as a result of 250-keV N+ ion implantation to doses within 5 × 1014–5 × 1016 cm–2 have been studied by the X-ray diffraction (XRD) and transmission electron micr...

    N. A. Sobolev, A. E. Kalyadin, K. V. Karabeshkin, R. N. Kyutt… in Technical Physics Letters (2018)

  16. No Access

    Article

    Magnetic and electric characterizations of sol–gel-derived NaFe(WO4)2 rods

    Wolframite-structured NaFe(WO4)2 (NFeW) micron sized particles with rod-type morphology were synthesized by sol–gel method with lower temperature and calcination time. The crystallization and melting temperature ...

    A. Durairajan, E. Venkata Ramana, B. Teixeira, N. A. Sobolev… in Applied Physics A (2018)

  17. No Access

    Article

    The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers

    Secondary-ion mass spectrometry and Rutherford proton backscattering have been used to measure the concentration profiles of nitrogen atoms and examine the defect structure of epitaxial GaAs layers implanted w...

    N. A. Sobolev, B. Ya. Ber, D. Yu. Kazantsev, A. E. Kalyadin… in Technical Physics Letters (2018)

  18. No Access

    Article

    Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon

    Influence of the measurement temperature in the range 5–130 K on the photoluminescence spectra of (113) defects in Si implanted with 350-keV oxygen ions at doses of 3.7 × 1014 cm–2 and annealed at a temperature o...

    N. A. Sobolev, A. E. Kalyadin, E. I. Shek, K. F. Shtel’makh in Semiconductors (2017)

  19. No Access

    Article

    Formation of hexagonal 9R silicon polytype by ion implantation

    Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9R polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO2/...

    D. S. Korolev, A. A. Nikolskaya, N. O. Krivulin, A. I. Belov… in Technical Physics Letters (2017)

  20. No Access

    Article

    Injection-induced terahertz electroluminescence from silicon p–n structures

    Injection-induced terahertz electroluminescence from silicon p +–n structures is observed at helium temperatures. Structures fabricated by the diffusion of boron into a phosphorus-...

    A. O. Zakhar’in, Yu. B. Vasilyev, N. A. Sobolev, V. V. Zabrodskii… in Semiconductors (2017)

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