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  1. No Access

    Article

    Local thermoelectric effects in wide-gap semiconductors

    Experimental confirmation of the appearance of local thermal electromotive forces, which were previously found in structures based on silicon p–n junctions, is obtained. The current–voltage and frequency characte...

    S. V. Ordin, Yu. V. Zhilyaev, V. V. Zelenin, V. N. Panteleev in Semiconductors (2017)

  2. No Access

    Article

    Absorption spectra of bulk aluminum nitride crystals doped with Er3+ ions

    This Letter presents results of analysis of the absorption spectra of AlN:Er3+ bulk crystals. In the spectral of 370–700 nm, absorption lines responsible for intraconfiguration electron transition from the ground...

    Yu. V. Zhilyaev, V. V. Zelenin, E. N. Mokhov, S. S. Nagalyuk… in Technical Physics Letters (2016)

  3. No Access

    Article

    The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH3-H2-Ar system

    We have studied epitaxial layers of gallium nitride (GaN) in a template composition grown by surfactant-mediated hydride-chloride vapor phase epitaxy. The surfactant component was provided by 5 mass % additive...

    Yu. V. Zhilyaev, V. V. Zelenin, T. A. Orlova, V. N. Panteleev… in Technical Physics Letters (2015)

  4. No Access

    Article

    Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density

    The temperature dependences of the contact resistance ρ c (T) of ohmic Pd-Ti-Pd-Au contacts to n-GaN and n-AlN wide-gap semiconductors with a high dislocation density are studied...

    A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev… in Semiconductors (2013)

  5. No Access

    Article

    Photoreflectance characterization of gallium arsenide

    A novel method of noncontact and nondestructive characterization by photoreflectance spectroscopy is validated on bulk and epitaxial GaAs single crystals with different levels of do**. The method is used to ...

    O. S. Komkov, A. N. Pikhtin, Yu. V. Zhilyaev in Russian Microelectronics (2012)

  6. No Access

    Article

    GaAs p-i-n structures for X-ray detectors grown on Ge and GaAs substrates

    Features of the creation of gallium arsenide (GaAs) p-i-n structures on germanium substrates are considered. Optimum regimes for growth of thick GaAs layers by hydride-chloride vapor phase epitaxy (HVPE) on Ge su...

    Yu. V. Zhilyaev, D. I. Mikulik, A. V. Nasonov, T. A. Orlova… in Technical Physics Letters (2012)

  7. No Access

    Article

    Epitaxy of gallium nitride in semi-polar direction on silicon

    The idea of a new method for growing gallium nitride (GaN) epilayers on (100)-oriented silicon substrates is disclosed. It has been experimentally established that the formation of a special oriented thin (600...

    V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova… in Technical Physics Letters (2012)

  8. No Access

    Article

    Generating broadband random Gaussian signals

    General approaches to the problem of generating random Gaussian signals are considered, a variant of practical implementation of such a generator is proposed, some technological aspects of the formation of act...

    Yu. V. Zhilyaev, N. D. Il’inskaya, A. N. Inovenkov… in Technical Physics Letters (2010)

  9. No Access

    Article

    Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology

    A new approach to the deposition of aluminum nitride (AlN) layers with thicknesses ranging within ∼0.1–10 μm on silicon single crystal substrates by hydride-chloride vapor-phase epitaxy (HVPE) has been develop...

    V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova… in Technical Physics Letters (2010)

  10. No Access

    Article

    Chloride vapor-phase epitaxy of gallium nitride at a reduced source temperature

    Gallium nitride (GaN) layers on sapphire substrates have been grown by hydride-chloride vaporphase epitaxy (HVPE) at a Ga-source temperature reduced from 890°C (standard value) to 600°C. All epilayers are tran...

    Yu. V. Zhilyaev, S. N. Rodin in Technical Physics Letters (2010)

  11. No Access

    Article

    High-temperature gallium phosphide dynistors

    Elements of the technology of gallium phosphide (GaP) epitaxial multilayer heterostructures grown by chemical vapor deposition in a chloride system are described and the main characteristics of GaP dynistors o...

    Yu. V. Zhilyaev, E. A. Panyutin, L. M. Fedorov in Technical Physics Letters (2009)

  12. No Access

    Article

    Growth of single-crystalline GaN layers in a horizontal reactor by chloride epitaxy

    Chloride epitaxy of GaN layers in a horizontal reactor is studied numerically. The steady 3D fluxes of the gas mixture in the reactor are simulated with allowance for heterogeneous reactions on the substrate (...

    S. A. Smirnov, V. N. Panteleev, Yu. V. Zhilyaev, S. N. Rodin… in Technical Physics (2008)

  13. No Access

    Article

    Binary acceptor do** of epitaxial gallium phosphide for high-temperature electronic devices

    We have experimentally studied the reverse-bias branch of the current-voltage (I–U) characteristics of high-temperature two-electrode devices (rectifying diode, Zener diode, hot electron emitter), the technology ...

    Yu. V. Zhilyaev, E. A. Panyutin, L. M. Fedorov in Technical Physics Letters (2008)

  14. No Access

    Article

    Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer

    A new approach is described, according to which the use of a thin silicon carbide (SiC) interlayer ensures the suppression of cracking and the simultaneous release of elastic strain in gallium nitride (GaN) ep...

    I. G. Aksyanov, V. N. Bessolov, Yu. V. Zhilyaev, M. E. Kompan… in Technical Physics Letters (2008)

  15. No Access

    Article

    Determination of the free carrier concentration in ultra-pure GaAs epilayers by a photoreflectance technique

    A new method for the diagnostics of high-quality n-GaAs epilayers grown by vapor phase epitaxy in an open chloride system has been developed and implemented. As the free carrier concentration in the material decr...

    O. S. Komkov, A. N. Pikhtin, Yu. V. Zhilyaev, L. M. Fedorov in Technical Physics Letters (2008)

  16. No Access

    Article

    Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers

    The structure and luminescent properties of gallium nitride (GaN) epilayers grown by hydride-chloride vapor-phase epitaxy (HVPE) in a hydrogen or argon atmosphere on 2-inch Si(111) substrates with AlN buffer l...

    V. N. Bessolov, V. M. Botnaryuk, Yu. V. Zhilyaev… in Technical Physics Letters (2006)

  17. No Access

    Article

    GaN films grown by vapor-phase epitaxy in a hydride-chloride system on Si(111) substrates with AlN buffer sublayers

    Oriented GaN layers with a thickness of about 10 μm have been grown by hydride-chloride vaporphase epitaxy (HVPE) on Si(111) substrates with AlN buffer layers. The best samples are characterized by a halfwidth...

    V. N. Bessolov, V. Yu. Davydov, Yu. V. Zhilyaev… in Technical Physics Letters (2005)

  18. No Access

    Article

    Bulk GaN layers grown on oxidized silicon by vapor-phase epitaxy in a hydride-chloride system

    Bulk GaN layers with a thickness of up to 1.5 mm and a lateral size of 50 mm were grown by hydride-chloride vapor-phase epitaxy (HVPE). The best samples show a half-width (FWHM) of the X-ray rocking curve of ωθ=2...

    Yu. V. Zhilyaev, S. D. Raevskii, D. Z. Grabko, D. S. Leu… in Technical Physics Letters (2005)

  19. No Access

    Article

    Correlation between the electrical and luminescent properties of high-purity gallium arsenide

    Epitaxial n-GaAs layers with a background impurity concentration of N D-N A<1015 cm−3, grown by chloride vapor phase epitaxy in an open system, exhibit correlation between the electrical properties and the long p...

    M. V. Botnaryuk, Yu. V. Zhilyaev, T. A. Orlova, N. K. Poletaev… in Technical Physics Letters (2004)

  20. No Access

    Article

    Raman and infrared spectroscopy of GaN nanocrystals grown by chloride-hydride vapor-phase epitaxy on oxidized silicon

    Raman and infrared spectroscopy were applied to study nanocrystalline GaN films grown by chloride-hydride vapor-phase epitaxy on SiO2/Si(111) substrates at T=520°C. It was ascertained that GaN nanocrystals are fo...

    V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, V. A. Fedirko… in Semiconductors (2003)

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