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Article
Gettering Effect in Cr/4H–SiC UV Photodetectors under Ptoton Irradiation with E = 15 MeV
The mechanism of structure transformation in Cr/4H–SiC UV photo detectors, which is responsi-ble for the cyclic gettering of radiation defects, under repeated proton irradiation, is proposed in this work.
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Article
Templates for Homoepitaxial Growth of 3C-SiC Obtained by Direct Bonding of Silicon Carbide Wafers of Differing Polytype
An approach of direct bonding of SiC wafers of differing polytypes has been implemented in order to create a template for cubic 3C-SiC homo epitaxy. Hetero epitaxial 3C-SiC layers grown by chemical vapor depositi...
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Article
Study of Heavily Doped n-3C-SiC Epitaxial Films Grown on 6H-SiC Semi-Insulating Substrates by Sublimation Method
Heavily doped 3C-SiC films based on semi-insulating 6H-SiC substrates were obtained by sublimation epitaxy. The structural perfection of the obtained samples was monitored by X-ray diffractometry. The measurement...
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Chapter and Conference Paper
Improving Thermal Characteristics of Double-Sided Face Grinding Machines
The uneven heating of the bed is the main reason for changing the angular position of the grinding wheels in double-sided face grinders, which leads to an increase in the machining error. The nodes of the face...
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Chapter and Conference Paper
Method of Simulation of the Thermal Deformation Behavior of Double-Sided Face Grinding Machines
The paper presents a technique for numerical simulation of the thermal deformation behavior of the load-bearing system of a double-sided face grinder using the Ansys. The machine tool is considered in two mode...
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Article
Irradiation with Argon Ions of Cr/4H-SiC Photodetectors
The results of the effect of irradiation with Ar ions on the structural, electrophysical, and optical characteristics of ultraviolet Cr/4H-SiC photodetectors in the spectral range 200 to 400 nm are presented. Aft...
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Chapter and Conference Paper
Experimental Thermal Performance Double-Sided Face Grinding Machine
The paper presents a description of the experimental thermal characteristics of a double-sided face grinding machine. Thermal characteristics in the form of time dependences of temperatures and displacements w...
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Chapter and Conference Paper
Feature of Predicting the Thermal Characteristics of Machine Tools Using Feedforward Neural Networks
The paper presents a method for predicting the thermal characteristics of machine tools using a feedforward neural network. The method was based on the results of full-scale and computational tests. Experiment...
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Chapter and Conference Paper
Methodology of Measuring Cutters by Using Coordinate Measuring Machine in Automatic Mode
The aim of the study was to develop a methodology for measuring the structural and geometric parameters of a straight bull-nose cutter. To test the effectiveness of the developed methodology for measuring the ...
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Chapter and Conference Paper
Application of Modal Analysis to Building Simulation Models of Thermal Processes in Machine Tools
In this paper, modal analysis is proposed to building simulation models of thermal processes in machine tools. The technique of building simulation models in Simulink in three ways is described. The first way ...
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Article
Structural, Electrical, and Optical Properties of 4H–SiC for Ultraviolet Photodetectors
The results of investigations of initial n-4H–SiC structures by various methods are presented. The structures represent a highly doped n+ substrate with epitaxial layers 5 μm thick grown by chemical vapor deposit...
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Article
Structural and Optical Characteristics of 4H-SiC UV Detectors Irradiated with Argon Ions
The results of a study into the effect of irradiation with heavy Ar ions on the structural and optical characteristics of 4H-SiC are presented. It is shown that even upon single-time irradiation with 53-MeV Ar io...
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Article
Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors
The influence exerted by the carrier concentration in the range (1–50) × 1014 cm–3 in n-4H-SiC chemical-vapor deposited (CVD) epitaxial layers on the spectral characteristics of UV photodetectors with Cr Schottky...
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Article
Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers
For the first time, comprehensive comparative investigations of ultraviolet photodetectors with Cr Schottky barriers formed on 4H-SiC epitaxial layers are carried out by the X-ray and optical methods before and a...
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Article
A Study of the Influence Exerted by Structural Defects on Photoluminescence Spectra in n-3C-SiC
Photoluminescence (PL) spectra have been studied in 3C-SiC/4H-SiC heterostructures and 3C‑SiC single crystals. It was shown that epitaxial 3C-SiC layers grown on 4H-SiC substrates have a markedly poorer crystal p...
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Article
Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers
The effects of 8-MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates are studied. Changes in the sample parameters were recorded by the Hall-effect method...
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Article
Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates
The method of chloride epitaxy is employed to grow β-Ga2O3 epitaxial layers on a c-sapphire substrate. Purified dry air is used as the source of oxygen. The layers are studied using the methods of X-ray diffracti...
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Article
On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy
The main problem of the epitaxial growth of thick AlN layers on a Si substrate consists in the formation of cracks, which complicates the application of structures of this kind in the fabrication of semiconduc...
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Article
Physical Properties of Bulk GaN Crystals Grown by HVPE
Free standing GaN platelets were fabricated by hydride vapor phase epitaxy (HVPE). The platelets having a current maximum size of 7×6×0.1 mm3 were obtained by HVPE growth of ~100 µm thick GaN layers on SiC substr...
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Article
GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown...
