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  1. No Access

    Article

    The Effect of AlN Buffer Layer Morphology on the Structural Quality of a Semipolar GaN Layer Grown on a Si(001) Substrate, According to Transmission Electron Microscopy Data

    Structural features of the interface between a semipolar gallium nitride layer and buffer layer of aluminum nitride grown on a SiC/Si(001) template misoriented by an angle of 7° were studied by high-resolution...

    D. A. Kirilenko, A. V. Myasoedov, A. E. Kalmykov… in Technical Physics Letters (2023)

  2. No Access

    Article

    Structural Characterization of a Short-Period Superlattice Based on the CdF2/CaF2/Si(111) Heterostructure by Transmission Electron Microscopy and X-Ray Diffractometry

    A detailed study of the structure of a short-period superlattice based on alternating layers of cadmium and calcium fluorides grown by molecular beam epitaxy on a silicon substrate (111) by transmission electr...

    L. M. Sorokin, R. N. Kyutt, V. V. Ratnikov, A. E. Kalmykov in Technical Physics Letters (2021)

  3. No Access

    Article

    A TEM Study of AlN–AlGaN–GaN Multilayer Buffer Structures on Silicon Substrates

    Two buffer structures based on AlxGa1 – xN solutions with silicon do** and without it have been studied by transmission electron microscopy. The structures have been grown on silicon substrates with the (111) o...

    A. V. Myasoedov, A. V. Sakharov, A. E. Nikolaev… in Technical Physics Letters (2020)

  4. No Access

    Article

    Third International Conference “Physics for Life Sciences” Study of Dentin Structural Features by Computed Microtomography and Transmission Electron Microscopy

    Dentin in the human tooth is a natural composite material with a complex multilevel hierarchical structure and consists of micro and nanostructures that are related to each other in a complex interrelation gov...

    T. S. Argunova, Zh. V. Gudkina, M. Yu. Gutkin, D. V. Zaytsev… in Technical Physics (2020)

  5. No Access

    Article

    An Increase of Threading Dislocations Filtering Efficiency in Al2O3 Templates with Faceted Surface Morphology During a Growth by Molecular Beam Epitaxy

    We present the results of a transmission electron microscopy and X-ray diffractometry investigation of AlN/c-Al2O3 templates with GaN ultrathin insertions grown by plasma-assisted molecular beam epitaxy. It has b...

    A. V. Myasoedov, D. V. Nechaev, V. V. Ratnikov, A. E. Kalmykov… in Technical Physics Letters (2020)

  6. No Access

    Article

    Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers

    Transmission electron microscopy was used to study the interaction of a + c and a dislocations in a thick (14 μm) semipolar GaN layer grown by hydride vapor phase epitaxy on a 3C-SiC/Si(001) template. It is shown...

    L. M. Sorokin, M. Yu. Gutkin, A. V. Myasoedov, A. E. Kalmykov… in Physics of the Solid State (2019)

  7. No Access

    Article

    Microstructure of Si Crystals Subjected to Irradiation with High-Energy H+ Ions and Heat Treatment by High-Resolution Three-Crystal X-Ray Diffraction and Transmission Electron Microscopy

    The structural features of the formation of radiation defects in proton-implanted layers of silicon plates during their heat treatment have been studied. New data on the nature, the characteristics, and the mi...

    V. E. Asadchikov, I. G. D’yachkova, D. A. Zolotov… in Physics of the Solid State (2019)

  8. No Access

    Article

    On Change in the Silicon Crystal Structure Implanted with Hydrogen Ions during Annealing Based on Three-Crystal X-Ray Diffractometry Data

    In this paper, we present the results of a three-crystal X-ray diffractometry (XRD) study of the state of a disturbed layer formed in silicon crystals by implantation of hydrogen ions with energies of 100 + 20...

    V. E. Asadchikov, I. G. D’yachkova, D. A. Zolotov… in Physics of the Solid State (2019)

  9. No Access

    Article

    Electrical and Magnetic Properties of Pb and In Nanofilaments in Asbestos near the Superconducting Transition

    Bulk nanocomposites based on superconducting metals Pb and In embedded into matrices of natural chrysotile asbestos with the nanotube internal diameter d ~ 6 nm have been fabricated and studied. The low-temperatu...

    A. V. Chernyaev, N. Yu. Mikhailin, D. V. Shamshur… in Physics of the Solid State (2018)

  10. No Access

    Article

    Asymmetry of the Defect Structure of Semipolar GaN Grown on Si(001)

    The defect structure of a thick (~15 μm) semipolar gallium nitride (GaN) layer grown by hydride–chloride vapor phase epitaxy on a Si(001) substrate with buffer layers has been studied by transmission electron ...

    A. E. Kalmykov, A. V. Myasoedov, L. M. Sorokin in Technical Physics Letters (2018)

  11. No Access

    Chapter and Conference Paper

    TEM Investigation of Nanostructures with a High Aspect Ratio

    In this work, we intend to demonstrate an essential role that can play a TEM investigation of cross-sections of HAR nanostructures for a characterization of their internal structure and surface morphology. For...

    A. V. Myasoedov, A. E. Kalmykov… in 3rd International Multidisciplinary Micros… (2017)

  12. No Access

    Article

    Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes

    The transition region of a 3C-SiC/4H-SiC heterostructure constituted by layers of the 3C and 4H polytypes has been studied. A previously proposed spinodal decomposition model was used to estimate the thickness ra...

    S. Yu. Davydov, A. A. Lebedev, S. P. Lebedev, A. A. Sitnikova… in Technical Physics Letters (2016)

  13. No Access

    Article

    Optical properties of metal nanoparticles in chrysotile channels

    Chrysotile samples with macroscopically ordered channels filled by gold and silver have been studied using optical transmission spectroscopy. The channels had inner diameters below 5 nm and lengths up to about...

    V. I. Belotitskii, Yu. A. Kumzerov, A. E. Kalmykov… in Technical Physics Letters (2016)

  14. No Access

    Article

    Size effects in electrical and magnetic properties of quasi-one-dimensional tin wires in asbestos

    Bulk composites have been prepared based on one-dimensional fibers of natural chrisothil-asbestos with various internal diameters (d = 6–2.5 nm) filled with tin. The electrical and magnetic properties of quasi-on...

    A. V. Chernyaev, D. V. Shamshur, A. V. Fokin, A. E. Kalmykov… in Physics of the Solid State (2016)

  15. No Access

    Article

    Fabrication of quasi-superlattices at the interface between 3C-SiC epitaxial layer and substrates of hexagonal SiC polytypes by sublimation epitaxy in vacuum

    Transmission electron microscopy has been used to study the structure of a transition layer between a hexagonal substrate (6H-SiC and 4H-SiC) and a cubic silicon carbide layer grown by sublimation epitaxy in vacu...

    A. A. Lebedev, S. Yu. Davydov, L. M. Sorokin, L. V. Shakhov in Technical Physics Letters (2015)

  16. No Access

    Article

    Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN

    This paper presents the results of the electron microscopic study of GaN/AlGaN/AlN/SiC/Si(111) structures grown by the metal-organic vapor phase epitaxy. A SiC epitaxial buffer nanolayer has been grown by a ne...

    S. A. Kukushkin, A. V. Osipov, M. M. Rozhavskaya… in Physics of the Solid State (2015)

  17. No Access

    Article

    Electron-microscopic study of Sn-chrisotile asbestos nanocomposite

    Transmission electron microscopy was used to study the structural state of tin in Sn-chrisotile asbestos nanocomposite. It is shown that tin in the nanocomposite forms a system of nanowires, which, in turn, co...

    L. M. Sorokin, A. E. Kalmykov, A. V. Fokin, Yu. A. Kumzerov in Technical Physics Letters (2014)

  18. No Access

    Article

    Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures

    Transmission electron microscopy and the cathodoluminescence method are used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is, as a rule, constituted by alternatin...

    A. A. Lebedev, M. V. Zamorianskaya, S. Yu. Davydov, D. A. Kirilenko… in Semiconductors (2013)

  19. No Access

    Article

    Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage

    X-ray diffraction and transmission electron microscopy techniques have been used to study the dynamics of variation of the structural characteristics and deformation state in SiC, AlN, and GaN epilayers sequen...

    V. V. Ratnikov, A. E. Kalmykov, A. V. Myasoedov… in Technical Physics Letters (2013)

  20. No Access

    Article

    Structural and optical properties of porous silicon prepared from a p +-epitaxial layer on n-Si(111)

    The structural and optical properties of porous silicon prepared by anodic etching of an n-Si(111) wafer with a p +-homoepitaxial layer on one side are studied by scanning electron microscopy and ...

    A. S. Len’shin, V. M. Kashkarov, D. A. Minakov, B. L. Agapov… in Technical Physics (2013)

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