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Article
High-Voltage 4H-SiC-Based Avalanche Diodes with a Negative Bevel
High-voltage avalanche p+–p–n0–n+ diodes based on 4H–SiC are fabricated. The diodes are made in the form of mesa structures with flat side walls forming a negative bevel. The mesa structures are formed by the dry...
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Article
High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination
High-voltage (2000V) 4H-SiC Schottky diodes are fabricated. To suppress the premature breakdown at the edge of diode structures, a field plate is formed as the edge termination. In this plate, an insulator layer ...
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Article
The Effect of Texturing of Silicon Wafer Surfaces for Solar Photoelectric Transducers on Their Strength Properties
An important technological operation for increasing the efficiency of silicon-based solar transducers is the formation of textures on the silicon surface with roughness sizes close to the wavelength of visible...
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Article
Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode
Methods of micro-profiling of 4H-SiC are described: formation of mesa structures with inclined walls (off-vertical wall inclination angle exceeding 45°) by reactive ion etching; etching of mesa structures with a ...
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Article
4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers
High-voltage (1600 V) diodes based on epitaxial 4H-SiC p++–p+–n0–n+ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This i...
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Article
Dynamic characteristics of 4H-SiC drift step recovery diodes
The dynamic characteristics of 4H-SiC p +–p–n 0–n + diodes are experimentally studied in the pulsed modes characteri...
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Article
Resistance of 4H-SiC Schottky barriers at high forward-current densities
The resistance of Schottky barriers based on 4H-SiC is experimentally determined at high forward-current densities. The measured resistance is found to be significantly higher than the resistance predicted by cla...
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Article
On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures
The mechanism of electron transport in amorphous-crystalline heterostructures fabricated on the basis of high-resistivity p-Si is considered in order to explain the features of experimental photosensitivity spect...
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Article
Modification of the structure and percolation of current in an array of single-walled carbon nanotubes
Percolation and electrical instability processes in an array of single-walled carbon nanotubes have been studied experimentally. The experiment is based on comparison between the dynamics of nanosecond percola...
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Article
The photosensitivity of amorphous-crystalline silicon heterostructures with an inversion channel
We investigate the effect of the resistivity of crystalline silicon (1.5–40 kΩ cm) and amorphousfilm thickness (200–2000 Å) on the photoelectric properties of (a-Si/c-Si) heterostructures based on high-resista...
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Article
Microdetermination of titanium on the developed silicon surface using cells made of perfluorinated proton-conducting membranes
A technique for microdetermination of titanium on the developed silicon surface is suggested. In this technique, thin titanium layers are dissolved in an aqueous solution of hydrofluoric acid and then the resu...
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Article
Specific features of nanosecond current-voltage characteristics of an array of carbon nanotubes
Nanosecond oulsed current-voltage characteristics of an array of multi- and single-walled carbon nanotubes has been studied in the presence of electric fields where instabilities with negative differential con...
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Article
Percolation, self-organized criticality, and electrical instability in carbon nanostructures
The processes of avalanche formation, percolation, and electrical instability have been investigated experimentally using multi-walled and single-walled carbon nanotubes as an example. The performed investigat...
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Article
Leakage currents in 4H-SiC JBS diodes
Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a c...
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Article
Carbon nanostructures as an example of the self-organized criticality
The mechanism of self-organized criticality in the region of the nano- and microsizes has been studied experimentally using carbon multiwalled nanotubes and powder polycrystalline graphite as examples. A class...
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Article
I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier
The I-V characteristics of high-voltage 4H-SiC diodes with a Schottky barrier ∼1.1 eV in height are measured and analyzed. The forward I-V characteristics proved to be close to “ideal” in the temperature range of...
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Article
High-voltage (3.3 kV) 4H-SiC JBS diodes
High-voltage 4H-SiC junction-barrier Schottky (JBS) diodes have been fabricated and studied. The working area of the diodes (anode contact area) is 1.44 mm2. At currents in the range from 10−11 to 1.5 A, the forw...
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Article
Portable power source based on air-hydrogen fuel cells with free-breathing cathodes
Portable power source based on air-hydrogen fuel cells (FCs) operating in a free-breathing cathode regime has been developed. At a volume of 100 cm3, the source has a power capacity of 8.5 W h and generates a pow...
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Article
Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane
Hydrogenated amorphous silicon layers with crystalline nanoparticles have been produced by plasma-enhanced chemical vapor deposition, with tetrafluorosilane added to the gas mixture. The photoluminescence kine...
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Article
Excess leakage currents in high-voltage 4H-SiC Schottky diodes
The high-voltage 4H-SiC Schottky diodes are fabricated with a nickel barrier and a guard system in the form of “floating” planar p-n junctions. The analysis of I–V characteristics measured in a wide temperature r...
