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  1. No Access

    Article

    High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

    Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown ...

    M. J. Jurkovic, L. K. Li, B. Turk, W. I. Wang, S. Syed… in MRS Online Proceedings Library (2012)

  2. No Access

    Article

    Characterization of InGaN Quantum Wells Grown by Molecular Beam Epitaxy (MBE) Using Ammonia as the Nitrogen Source

    Single quantum well InGaN was grown by molecular beam epitaxy with ammonia as the nitrogen source. The samples were grown on (0001) sapphire substrates. The photoluminescence (PL) intensity of InGaN quantum we...

    F. Semendy, L. K. Li, M. J. Jurkovic, W. I. Wang in MRS Online Proceedings Library (2012)

  3. Article

    High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

    Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown...

    M.J. Jurkovic, L.K. Li, B. Turk, W.I. Wang… in MRS Internet Journal of Nitride Semiconduc… (2000)

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  4. No Access

    Article

    Comparison of GaAs grown on standard Si (511) and compliant SOI (511)

    Gallium arsenide (GaAs) films were grown by molecular beam epitaxy (MBE) on a (511) silicon substrate and a compliant (511) silicon-on-insulator (SOI) substrate. The top silicon layer of the compliant (511) SO...

    M. L. Seaford, D. H. Tomich, K. G. Eyink, L. Grazulis… in Journal of Electronic Materials (2000)

  5. No Access

    Article

    Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate

    We present in this article device characteristics of molecular beam epitaxy grown GaAs/AlGaAs quantum well infrared photodetectors (QWIP) on a semi-insulating GaAs substrate and on a GaAs-on-Si substrate grown...

    D. K. Sengupta, M. B. Weisman, M. Feng, S. L. Chuang… in Journal of Electronic Materials (1998)

  6. No Access

    Article

    Monolithically Integrated Dual-Band Quantum Well Infrared Photodetector

    A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3 - 5.3 fum and 7.5 - 14fum, respectively. Th...

    D. K. Sengupta, S. D. Gunapala, S. V. Bandara, F. Pool… in MRS Online Proceedings Library (1997)

  7. No Access

    Article

    P-type Mg-doped GaN grown by molecular beam epitaxy using ammonia as the nitrogen source

    The electrical and luminescent properties of Mg-doped GaN films grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source have been investigated. Due to their different growth environments, th...

    Z. Yang, L.K. Li, W.I. Wang in MRS Online Proceedings Library (1995)

  8. No Access

    Article

    The Problem of Do** Wide Gap II-VI Compound Semiconductors and Its Solutions

    Wide gap II-VI compound semiconductors are difficult to be doped amphoterically. After more than thirty years of research in II-VI compound semiconductors, there does not even exist a satisfatory simultaneous ...

    W. I. Wang in MRS Online Proceedings Library (1991)

  9. No Access

    Article

    Low Temperature Growth of Gaas Quantum Well Lasers by Modulated Beam Epitaxy

    GaAs single quantum well lasers have been successfully grown at low temperatures by a modulated beam epitaxy process in which the Al/Ga flux is held constant while the As flux is periodically shut off to produ...

    S. **n, K. F. Longenbach, C. Schwartz, Y. Jiang… in MRS Online Proceedings Library (1991)

  10. No Access

    Article

    High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells

    The pressure coefficients (α) of the excitonic transitions arising from the conduction (CB) to the heavy (HH) and light (LH) hole sub-bands of a GaSb-AlSb multiple quantum well structure (MQW) grown on a GaAs ...

    Benjamin Rockwell, H.R. Chandrasekhar… in MRS Online Proceedings Library (1989)