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  1. No Access

    Article

    Using a computer to obtain Chebotarev bounds in the nonhomogeneous Minkowski's conjecture

    The Chebotarev method in Skubenko's form [7] is applied in order to generate by computer improved upper bounds on the product of n real linear nonhomogeneous forms of n variables.

    A. K. Andriyasyan, I. V. Il'in, A. V. Malyshev in Journal of Soviet Mathematics (1988)

  2. No Access

    Article

    Numerical study of the problem of unsteady heat transfer in a cased-well-bed system

    A solution is presented for an unsteady axisymmetric heat-conduction problem connected with the development of the theory of the geothermal logging of cased wells. The solution is used as a basis for reaching ...

    I. V. Il'in, A. S. Kashik, Yu. A. Popov, S. D. Tseitlin in Journal of engineering physics (1991)

  3. No Access

    Article

    Electron paramagnetic resonance of scandium in silicon carbide

    The EPR spectra of scandium acceptors and Sc2+(3d) ions are observed in 6H-SiC crystals containing a scandium impurity. The EPR spectra of scandium acceptors are characterized by comparatively small hyperfine int...

    P. G. Baranov, I. V. Il’in, E. N. Mokhov, A. D. Roenkov… in Physics of the Solid State (1997)

  4. No Access

    Article

    Electron paramagnetic resonance of deep boron acceptors in 4H-SiC and 3C-SiC crystals

    EPR spectra of deep boron in 4H-SiC and 3C-SiC crystals have been observed and studied. Two sites in 4H-SiC produced deep-boron EPR signals, quasi-cubic k and hexagonal h. In both cases the deep-boron center symm...

    P. G. Baranov, I. V. Il’in, E. N. Mokhov in Physics of the Solid State (1998)

  5. No Access

    Article

    Electron paramagnetic resonance of defects with metastable properties in crystalline GaN

    An EPR study of GaN revealed the presence of defects exhibiting metastable properties. EPR spectra of two centers (ii1a and ii1b) with axial symmetry along the hexagonal axis of the crystal, which have strongly a...

    P. G. Baranov, I. V. Il’in, E. N. Mokhov, V. A. Khramtsov in Physics of the Solid State (1998)

  6. No Access

    Article

    Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: Recent EPR studies

    EPR studies of transition-element ions in SiC and GaN and of erbium in 6H-SiC are reported. Data are presented on Sc2+ ions and scandium acceptors, and chromium and molybdenum ions in various charge states in SiC...

    P. G. Baranov, I. V. Il’in, E. N. Mokhov, V. A. Khramtsov in Physics of the Solid State (1999)

  7. No Access

    Article

    Properties of erbium luminescence in bulk crystals of silicon carbide

    The infrared luminescence of Er3+ ions has been studied in bulk crystals of silicon carbide 6H-SiC doped with erbium in the process of their growth. The erbium centers of different symmetry in the crystals are re...

    R. A. Babunts, V. A. Vetrov, I. V. Il’in, E. N. Mokhov… in Physics of the Solid State (2000)

  8. No Access

    Article

    Modeling of emission spectra of the flaring red dwarf EV Lac: Active regions, flares, and microflares

    Echelle spectrograms of the flaring red dwarf EV Lac obtained on the Nordic Optical Telescope are used to study the chromosphere of the star during the impulsive flare of 23:19 UT on August 30, 1994, and in tw...

    I. Yu. Alekseev, É. A. Baranovskii, R. E. Gershberg, I. V. Il’in… in Astronomy Reports (2003)

  9. No Access

    Article

    Electron paramagnetic resonance in neutron-transmutation-doped semiconductors with a changed isotopic composition

    Potential applications of electron paramagnetic resonance (EPR) for investigating and controlling the process of neutron transmutation do** (NTD) of semiconducting germanium, silicon, and silicon carbide are...

    P. G. Baranov, A. N. Ionov, I. V. Il’in, P. S. Kop’ev… in Physics of the Solid State (2003)

  10. No Access

    Article

    EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide

    It is shown that intrinsic defects responsible for the semi-insulating properties of SiC represent Si-C divacancies in a neutral state (V Si-V C)0, which have the triplet ground state. The energy level scheme and...

    P. G. Baranov, I. V. Il’in, E. N. Mokhov… in Journal of Experimental and Theoretical Ph… (2005)

  11. No Access

    Article

    Probing of the shallow donor and acceptor wave functions in silicon carbide and silicon through an EPR study of crystals with a modified isotopic composition

    The spatial distributions of the unpaired-electron wave functions of shallow N donors in SiC crystals and of shallow P and As donors in silicon crystals were determined by studying crystals with a modified con...

    P. G. Baranov, B. Ya. Ber, O. N. Godisov, I. V. Il’in… in Physics of the Solid State (2005)

  12. No Access

    Article

    Neutron transmutation do** of silicon 30Si monoisotope with phosphorus

    Phosphorus-doped silicon 30Si monoisotope samples with a highly homogeneous impurity distribution at a concentration of 5 × 1016 cm−3 were obtained for the first time by means of neutron transmutation do**.

    A. N. Ionov, P. G. Baranov, B. Ya. Ber, A. D. Bulanov… in Technical Physics Letters (2006)

  13. No Access

    Article

    Lithium and the 6Li-7Li isotope ratio in the atmospheres of some sharp-lined roAp stars

    The λ 6708 Å and 6103 Å lithium lines in the high-resolution spectra of some sharp-lined roAp stars are analyzed using three spectral-synthesis codes STARSP, ZEEMAN2, and SYNTHM. The lines from the VALD databa...

    A. V. Shavrina, N. S. Polosukhina, S. Khan, Ya. V. Pavlenko… in Astronomy Reports (2006)

  14. No Access

    Article

    Specific features of transmutational do** of 30Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance

    Electron spin resonance (ESR) is used to study the neutron transmutation do** of silicon crystals enriched with 30Si isotope: phosphorus donors and radiation defects produced in the course of transmutational do...

    P. G. Baranov, B. Ya. Ber, O. N. Godisov, I. V. Il’in, A. N. Ionov… in Semiconductors (2006)

  15. No Access

    Article

    Electron spin resonance detection and identification of nitrogen centers in nanodiamonds

    Individual nitrogen centers N0 and nitrogen pairs N 2 + have been detected and identified in natural diamond nanocrystals by means of the high-frequency electr...

    P. G. Baranov, I. V. Il’in, A. A. Soltamova, A. Ya. Vul’, S. V. Kidalov… in JETP Letters (2009)

  16. No Access

    Article

    Electron paramagnetic resonance detection of the giant concentration of nitrogen vacancy defects in sintered detonation nanodiamonds

    A giant concentration of nitrogen vacancy defects has been revealed by the electron paramagnetic resonance (EPR) method in a detonation nanodiamond sintered at high pressure and temperature. A high coherence o...

    A. A. Soltamova, I. V. Il’in, F. M. Shakhov, S. V. Kidalov, A. Ya. Vul’… in JETP Letters (2010)

  17. No Access

    Article

    Point defects in silicon carbide as a promising basis for spectroscopy of single defects with controllable quantum states at room temperature

    The spin and optical properties of silicon vacancy defects in silicon carbide of the hexagonal 6H polytype have been investigated using photoluminescence, electron paramagnetic resonance, and X-band optically det...

    V. A. Soltamov, D. O. Tolmachev, I. V. Il’in, G. V. Astakhov… in Physics of the Solid State (2015)

  18. No Access

    Article

    An optical quantum magnetometer with submicron resolution based on the level anticrossing phenomenon

    An optical quantum magnetometer with submicron spatial resolution is proposed that is based on the phenomenon of optical response in a solid-state spin system under conditions of spin sublevel anticrossing wit...

    A. N. Anisimov, D. O. Tolmachev, R. A. Babunts… in Technical Physics Letters (2016)

  19. No Access

    Article

    Electronic structure and spatial distribution of the spin density of shallow nitrogen donors in the SiC lattice

    The discovery of unique magnetooptical properties of paramagnetic centers in silicon carbide, which make it possible to control spins of small arrays of centers of atomic sizes to single centers at room temper...

    M. V. Muzafarova, I. V. Il’in, A. N. Anisimov, E. N. Mokhov… in Physics of the Solid State (2016)

  20. No Access

    Article

    An optical quantum thermometer with submicrometer resolution based on the level anticrossing phenomenon

    An optical quantum thermometer with submicrometer resolution is proposed. Its operation is based on the physical phenomenon of the optical response in a system of spin centers in silicon carbide under conditio...

    A. N. Anisimov, R. A. Babunts, M. V. Muzafarova… in Technical Physics Letters (2017)

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