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Electron paramagnetic resonance in neutron-transmutation-doped semiconductors with a changed isotopic composition

  • Semiconductors and Dielectrics
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Abstract

Potential applications of electron paramagnetic resonance (EPR) for investigating and controlling the process of neutron transmutation do** (NTD) of semiconducting germanium, silicon, and silicon carbide are discussed. It is shown that EPR enables one to control the process of annealing of radiation-induced defects in semiconductors subject to neutron irradiation and to detect the shallow donors restored in the process of annealing of donor-compensating defects by observing EPR signals from these donors. EPR can be used to separately detect isolated donors and clusters of two, three, and more exchange-bound donor atoms and thereby determine the degree of nonuniformity of the impurity distribution over the crystal. Neutron transmutation do** is demonstrated to produce a fairly uniform arsenic-donor distribution in a germanium crystal. It is argued that semiconductors enriched in the selected isotopes should be used for NTD. The results of an investigation of phosphorus donors in silicon carbide are presented.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    P. G. Baranov, A. N. Ionov, I. V. Il’in, P. S. Kop’ev, E. N. Mokhov & V. A. Khramtsov

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  1. P. G. Baranov
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  2. A. N. Ionov
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  3. I. V. Il’in
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  4. P. S. Kop’ev
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  5. E. N. Mokhov
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  6. V. A. Khramtsov
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__________

Translated from Fizika Tverdogo Tela, Vol. 45, No. 6, 2003, pp. 984–995.

Original Russian Text Copyright © 2003 by Baranov, Ionov, Il’in, Kop’ev, Mokhov, Khramtsov.

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Baranov, P.G., Ionov, A.N., Il’in, I.V. et al. Electron paramagnetic resonance in neutron-transmutation-doped semiconductors with a changed isotopic composition. Phys. Solid State 45, 1030–1041 (2003). https://doi.org/10.1134/1.1583785

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