Abstract
Phosphorus-doped silicon 30Si monoisotope samples with a highly homogeneous impurity distribution at a concentration of 5 × 1016 cm−3 were obtained for the first time by means of neutron transmutation do**.
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Original Russian Text © A.N. Ionov, P.G. Baranov, B.Ya. Ber, A.D. Bulanov, O.N. Godisov, A.V. Gusev, V.Yu. Davydov, I.V. Il’in, A.K. Kaliteevskiĭ, M.A. Kaliteevskiĭ, A.Yu. Safronov, I.M. Lazebnik, H.-J. Pohl, H. Riemann, N.V. Abrosimov, P.S. Kop’ev, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 12, pp. 87–94.
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Ionov, A.N., Baranov, P.G., Ber, B.Y. et al. Neutron transmutation do** of silicon 30Si monoisotope with phosphorus. Tech. Phys. Lett. 32, 550–553 (2006). https://doi.org/10.1134/S1063785006060307
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DOI: https://doi.org/10.1134/S1063785006060307