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Article
Diagnostics Methods of Local Stresses/Strains in Diamond at Room Temperature Based on Optically Detected Magnetic Resonance of NV Defects
A method for diagnostics of local stresses/strains in diamond at room temperature based on optically detected magnetic resonance (ODMR) of NV defects in a zero magnetic field using low-frequency microwave power m...
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Article
High-Temperature Diffusion of the Acceptor Impurity Be in AlN
The high-temperature diffusion of an acceptor impurity of beryllium (Be) into bulk single-crystal aluminum nitride (AlN) has been studied. It is shown that the introduction of Be leads to the appearance of gre...
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Article
Generation of Optically Addressable Spin Centers in Hexagonal Boron Nitride by Proton Irradiation
The possibility of creating defects with spin-dependent fluorescence in a van der Waals material, namely, hexagonal boron nitride (hBN), by irradiating the latter with high-energy protons (EP = 15 MeV) is studied...
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Article
Fully Optical Detection of Hyperfine Electron–Nuclear Interactions in Spin Centers in 6H-SiC Crystals with a Modified 13C Isotope Content
Optically induced alignment and polarization of electron and nuclear spins in color centers with electron spin \(S = 3{\text{/}}2\) ...
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Article
Features of High-Frequency EPR/ESE/ODMR Spectroscopy of NV-Defects in Diamond
The methods of high-frequency electron paramagnetic resonance (EPR), electron spin echo (ESE) and optically detected magnetic resonance (ODMR) are used to study the unique properties of nitrogen-vacancy (NV) d...
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Article
Application of High-Frequency EPR Spectroscopy for the Identification and Separation of Nitrogen and Vanadium Sites in Silicon Carbide Crystals and Heterostructures
The advantage of the high-frequency spectroscopy of electron paramagnetic resonance (EPR) for the identification of nitrogen donors and a deep compensating vanadium impurity in various crystallographic positio...
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Article
A Scanning Optical Quantum Magnetometer Based on the Hole Burning Phenomenon
A scanning optical quantum magnetometer with submicron spatial resolution is proposed that is based on the phenomenon of hole burning in the signal of optically detected magnetic resonance (ODMR) on atomic-siz...
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Article
Spin Diagnostics of Local Polytypic Composition of Silicon Carbide with Submicron Spatial Resolution
A new diagnostic method for evaluation of the local polytypic composition of silicon carbide at room temperature is proposed using known and tabulated zero-field splitting values for spin color centers with S = 3...
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Article
An Optical Quantum Thermometer with Submicron Resolution Based on the Cross-Relaxation Phenomenon of Spin Levels
An optical quantum thermometer with a submicron spatial resolution that is based on the physical phenomenon of optical response in the system of spin centers in silicon carbide under conditions of cross-relaxa...
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Article
Group III Acceptors with Shallow and Deep Levels in Silicon Carbide: ESR and ENDOR Studies
Results of investigations of Group III acceptors (B, Al, and Ga) in crystals of silicon carbide using the most informative electron spin resonance and electron nuclear double resonance methods are presented. S...
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Article
An optical quantum thermometer with submicrometer resolution based on the level anticrossing phenomenon
An optical quantum thermometer with submicrometer resolution is proposed. Its operation is based on the physical phenomenon of the optical response in a system of spin centers in silicon carbide under conditio...
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Article
Electronic structure and spatial distribution of the spin density of shallow nitrogen donors in the SiC lattice
The discovery of unique magnetooptical properties of paramagnetic centers in silicon carbide, which make it possible to control spins of small arrays of centers of atomic sizes to single centers at room temper...
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Article
An optical quantum magnetometer with submicron resolution based on the level anticrossing phenomenon
An optical quantum magnetometer with submicron spatial resolution is proposed that is based on the phenomenon of optical response in a solid-state spin system under conditions of spin sublevel anticrossing wit...
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Article
Diagnostics of NV defect structure orientation in diamond using optically detected magnetic resonance with a modulated magnetic field
A method for determining the orientation of nitrogen-vacancy (NV) defect structure orientation in diamond crystals and nanodiamonds is proposed, which is based on the optically detected magnetic resonance tech...
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Article
Probing of the shallow donor and acceptor wave functions in silicon carbide and silicon through an EPR study of crystals with a modified isotopic composition
The spatial distributions of the unpaired-electron wave functions of shallow N donors in SiC crystals and of shallow P and As donors in silicon crystals were determined by studying crystals with a modified con...
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Article
EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide
It is shown that intrinsic defects responsible for the semi-insulating properties of SiC represent Si-C divacancies in a neutral state (V Si-V C)0, which have the triplet ground state. The energy level scheme and...
