Abstract
Electron spin resonance (ESR) is used to study the neutron transmutation do** of silicon crystals enriched with 30Si isotope: phosphorus donors and radiation defects produced in the course of transmutational do** are observed. The ESR signals related to the phosphorus uncontrolled impurity in 30Si before transmutational do** (the P concentration is ∼1015 cm−3) and phosphorus introduced by neutron irradiation with doses ∼1 × 1019 cm−2 and ∼1 × 1020 cm−2 (the P concentrations are ∼5 × 1016 and ∼7 × 1017 cm−3, respectively) are studied. As a result of drastic narrowing of the phosphorus ESR lines in 30Si, the intensity of lines increased appreciably, which made it possible to measure the phosphorus concentration in the samples with a small volume (down to 10−6 mm−3). The methods for determining the concentration of P donors from hyperfine structure in the ESR spectra of isolated P atoms, exchange-related pairs, and clusters that consist of three, four, and more P donors are developed. In the region of high concentrations of P donors, in which case the hyperfine structure disappears, the concentration of P donors was estimated from the exchange-narrowed ESR line.
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Original Russian Text © P.G. Baranov, B.Ya. Ber, O.N. Godisov, I.V. Il’in, A.N. Ionov, A.K. Kaliteevskiĭ, M.A. Kaliteevskiĭ, I.M. Lazebnik, A.Yu. Safronov, H.-J. Pohl, H. Riemann, N.V. Abrosimov, P.S. Kop’ev, A.D. Bulanov, A.V. Gusev, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 8, pp. 930–939.
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Baranov, P.G., Ber, B.Y., Godisov, O.N. et al. Specific features of transmutational do** of 30Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance. Semiconductors 40, 901–910 (2006). https://doi.org/10.1134/S1063782606080082
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DOI: https://doi.org/10.1134/S1063782606080082