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Article
Diagnostics Methods of Local Stresses/Strains in Diamond at Room Temperature Based on Optically Detected Magnetic Resonance of NV Defects
A method for diagnostics of local stresses/strains in diamond at room temperature based on optically detected magnetic resonance (ODMR) of NV defects in a zero magnetic field using low-frequency microwave power m...
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Article
Relaxation Processes and Coherent Spin Manipulations for Triplet Si–C Divacancies in Silicon Carbide Enriched Tenfold in the 13C Isotope
Coherent spin manipulations of ensembles of color centers in the form of neutral VSi–VC divacancies with the spin \(S = 1\) i...
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Article
Open Access6H–SiC Nanoparticles Integrated with an Atomic Force Microscope for Scanning Quantum Sensors
We fabricate a quantum magnetic field sensor based on the silicon vacancy centers in 6H–SiC using atomic force microscopy technique. The quantum sensing is based on optically detected magnetic resonance. To im...
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Article
Open AccessManifestations of Electron–Nuclear Interactions in the High-Frequency ENDOR/ODMR Spectra for Triplet Si–C Divacancies in 13C-Enriched SiC
The frequencies of electron–nuclear interactions with 13C and 29Si nuclei on remote coordination spheres are determined in triplet spin centers in the form of neutral VSi–VC divacancies in a silicon carbide cryst...
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Article
The Effect of Liquid Silicon on the AlN Crystal Growth
The question of why a high-quality bulk AlN crystal can be grown on a SiC seed, which is superior in a number of parameters to the same crystal grown on its own seed, remains open. We set ourselves the task of...
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Article
Open AccessInverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface
Controllable solid-state spin qubits are currently becoming useful building blocks for applied quantum technologies. Here, we demonstrate that in a specific type of silicon-vacancy in the 6H-SiC polytype the e...
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Article
Fully Optical Detection of Hyperfine Electron–Nuclear Interactions in Spin Centers in 6H-SiC Crystals with a Modified 13C Isotope Content
Optically induced alignment and polarization of electron and nuclear spins in color centers with electron spin \(S = 3{\text{/}}2\) ...
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Article
Effect of Mechanical Stress on the Splitting of Spin Sublevels in 4H-SiC
The effect of static mechanical strain on the splitting of spin sublevels of color centers based on spin 3/2 silicon vacancies in silicon carbide at room temperature has been shown. The deformed heterointerfac...
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Article
On the Raman Scattering, Infrared Absorption, and Luminescence Spectroscopy of Aluminum Nitride Doped with Beryllium
The effects of the high-temperature (T = 1880°C) diffusion of beryllium ions and of electron irradiation on the optical properties of single-crystal aluminum nitride is studied. It is shown that the introduction ...
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Article
Distribution of Nitrogen-Vacancy NV– Centers in Cubic Diamond Crystals from Anabar Placers as Revealed By ODMR and PL Tomography
Nitrogen-vacancy NV– centers, which are of considerable interest for quantum electronics, are artificially produced in the diamond structure by irradiation and subsequent annealing. In this work, these centers we...
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Article
High-Temperature Spin Manipulation on Color Centers in Rhombic Silicon Carbide Polytype 21R-SiC
A family of atomic-scale color centers, the spin state of which can be controlled via optical and microwave channels, has been found in the rhombic polytype of silicon carbide 21R-SiC considered as a natural s...
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Article
Optically Detected Magnetic Resonance Spectroscopy in Silicon Carbide using Temperature Sweep
Optically detected magnetic resonance with temperature sweep is developed using the temperature dependence of the spin Hamiltonian parameters of paramagnetic color centers in silicon carbide. The detection is ...
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Article
Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds
The Raman-scattering technique is used to analyze the structural quality of bulk AlN crystals grown by sublimation on SiC and AlN seeds. Growth on SiC seeds is conducted with retention of the SiC seed during g...
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Article
A Scanning Optical Quantum Magnetometer Based on the Hole Burning Phenomenon
A scanning optical quantum magnetometer with submicron spatial resolution is proposed that is based on the phenomenon of hole burning in the signal of optically detected magnetic resonance (ODMR) on atomic-siz...
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Article
Open AccessExcitation and coherent control of spin qudit modes in silicon carbide at room temperature
One of the challenges in the field of quantum sensing and information processing is to selectively address and coherently manipulate highly homogeneous qubits subject to external perturbations. Here, we presen...
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Article
Spin Diagnostics of Local Polytypic Composition of Silicon Carbide with Submicron Spatial Resolution
A new diagnostic method for evaluation of the local polytypic composition of silicon carbide at room temperature is proposed using known and tabulated zero-field splitting values for spin color centers with S = 3...
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Article
Physical Foundations of an Application of Scanning Probe with Spin Centers in SiC for the Submicron Quantum Probing of Magnetic Fields and Temperatures
Optical and radio-frequency physical effects that allow spin manipulations at room temperature using magnetic resonance, effects of anticrossing levels in the ground and excited quadruplet spin states, and cro...
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Article
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method
The Raman spectra of thick (~100 μm and more) GaN layers grown on crystalline SiC substrates by the sublimation sandwich method are studied. Good agreement between the spectra of the SiC substrates used in the...
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Article
An Optical Quantum Thermometer with Submicron Resolution Based on the Cross-Relaxation Phenomenon of Spin Levels
An optical quantum thermometer with a submicron spatial resolution that is based on the physical phenomenon of optical response in the system of spin centers in silicon carbide under conditions of cross-relaxa...
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Article
Room-Temperature Level Anticrossing and Cross-Relaxation Spectroscopy of Spin Color Centers in SiC Single Crystals and Nanostructures
A sharp variation of the near infrared photoluminescence intensity for spin-3/2 color centers in hexagonal (4H-, 6H-) and rhombic (15R-) SiC polytypes in the vicinity of level anticrossing (LAC) and cross-rela...
