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  1. Article

    Open Access

    Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface

    Controllable solid-state spin qubits are currently becoming useful building blocks for applied quantum technologies. Here, we demonstrate that in a specific type of silicon-vacancy in the 6H-SiC polytype the e...

    I. D. Breev, Z. Shang, A. V. Poshakinskiy, H. Singh, Y. Berencén in npj Quantum Information (2022)

  2. No Access

    Article

    Effect of Mechanical Stress on the Splitting of Spin Sublevels in 4H-SiC

    The effect of static mechanical strain on the splitting of spin sublevels of color centers based on spin 3/2 silicon vacancies in silicon carbide at room temperature has been shown. The deformed heterointerfac...

    I. D. Breev, K. V. Likhachev, V. V. Yakovleva, I. P. Veishtort in JETP Letters (2021)

  3. Article

    Open Access

    Excitation and coherent control of spin qudit modes in silicon carbide at room temperature

    One of the challenges in the field of quantum sensing and information processing is to selectively address and coherently manipulate highly homogeneous qubits subject to external perturbations. Here, we presen...

    V. A. Soltamov, C. Kasper, A. V. Poshakinskiy, A. N. Anisimov in Nature Communications (2019)

  4. No Access

    Article

    Room-Temperature Level Anticrossing and Cross-Relaxation Spectroscopy of Spin Color Centers in SiC Single Crystals and Nanostructures

    A sharp variation of the near infrared photoluminescence intensity for spin-3/2 color centers in hexagonal (4H-, 6H-) and rhombic (15R-) SiC polytypes in the vicinity of level anticrossing (LAC) and cross-rela...

    A. N. Anisimov, V. A. Soltamov, E. N. Mokhov, P. G. Baranov in Applied Magnetic Resonance (2018)

  5. Article

    Open Access

    Observation of the universal magnetoelectric effect in a 3D topological insulator

    The electrodynamics of topological insulators (TIs) is described by modified Maxwell’s equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polar...

    V. Dziom, A. Shuvaev, A. Pimenov, G. V. Astakhov, C. Ames in Nature Communications (2017)

  6. Article

    Open Access

    Optical thermometry based on level anticrossing in silicon carbide

    We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the opticall...

    A. N. Anisimov, D. Simin, V. A. Soltamov, S. P. Lebedev in Scientific Reports (2016)

  7. No Access

    Article

    Spin Centres in SiC for Quantum Technologies

    Atomic-scale colour centres in bulk and nanocrystalline SiC are promising for quantum information processing, photonics and sensing at ambient conditions. Their spin state can be initialized, manipulated and r...

    G. V. Astakhov, D. Simin, V. Dyakonov, B. V. Yavkin in Applied Magnetic Resonance (2016)

  8. No Access

    Article

    An optical quantum magnetometer with submicron resolution based on the level anticrossing phenomenon

    An optical quantum magnetometer with submicron spatial resolution is proposed that is based on the phenomenon of optical response in a solid-state spin system under conditions of spin sublevel anticrossing wit...

    A. N. Anisimov, D. O. Tolmachev, R. A. Babunts in Technical Physics Letters (2016)

  9. No Access

    Article

    Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

    Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiati...

    F. Fuchs, B. Stender, M. Trupke, D. Simin, J. Pflaum, V. Dyakonov in Nature Communications (2015)

  10. No Access

    Article

    Point defects in silicon carbide as a promising basis for spectroscopy of single defects with controllable quantum states at room temperature

    The spin and optical properties of silicon vacancy defects in silicon carbide of the hexagonal 6H polytype have been investigated using photoluminescence, electron paramagnetic resonance, and X-band optically det...

    V. A. Soltamov, D. O. Tolmachev, I. V. Il’in, G. V. Astakhov in Physics of the Solid State (2015)

  11. Article

    Open Access

    Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

    Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect becau...

    H. Kraus, V. A. Soltamov, F. Fuchs, D. Simin, A. Sperlich in Scientific Reports (2014)

  12. No Access

    Article

    Room-temperature quantum microwave emitters based on spin defects in silicon carbide

    Atomic-scale defects in silicon carbide are always present and usually limit the performance of this material in high-power electronics and radiofrequency communication. Here, we reveal a family of homotypic s...

    H. Kraus, V. A. Soltamov, D. Riedel, S. Väth, F. Fuchs, A. Sperlich in Nature Physics (2014)

  13. Article

    Open Access

    Silicon carbide light-emitting diode as a prospective room temperature source for single photons

    Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as...

    F. Fuchs, V. A. Soltamov, S. Väth, P. G. Baranov, E. N. Mokhov in Scientific Reports (2013)

  14. No Access

    Article

    Universal estimation of X- trion binding energy in semiconductor quantum wells

    We have analyzed the binding energy (EBT) of negatively charged excitons (X-) in GaAs, CdTe and ZnSe quantum wells, which differ considerably in exciton and trion binding energy. Surprisingly, the EBT in these ma...

    R. A. Sergeev, R. A. Suris, G. V. Astakhov in The European Physical Journal B - Condense… (2005)

  15. No Access

    Chapter and Conference Paper

    Combined Exciton-Electron Optical Processes in Optical Spectra of Modulation Doped QWs

    We present a detailed study of combined exciton-electron processes in modulation doped quantum well structures contain a 2DEG of low density. We observed resonance exciton-electron processes in magnetic fields...

    V. P. Kochereshko, D. R. Yakovlev in Optical Properties of 2D Systems with Inte… (2003)

  16. No Access

    Chapter and Conference Paper

    Positively and Negatively Charged Trions in ZnSe-Based Quantum Wells

    Excitons and charged excitons (trions) are investigated in ZnSe-based quantum well structures with (Zn,Be,Mg)Se and (Zn,Mg)(S,Se) barriers by means of magneto-optical spectroscopy. Binding energies of negative...

    W. Ossau, G. V. Astakhov, D. R. Yakovlev in Optical Properties of 2D Systems with Inte… (2003)

  17. No Access

    Chapter and Conference Paper

    Optical Studies of Spin Polarized 2Deg in Modulation-Doped (Zn,Mn)Se/(Zn,Be)Se Quantum Wells in High Magnetic Fields

    Optical properties of (Zn,Mn)Se/(Zn,Be)Se quantum wells containing a two-dimensional electron gas with densities varying from 109 to 5.5 × 1011 cm-2 have been studied in magnetic fields up to 45 T. A strong sd

    D. Keller, G. V. Astakhov, D. R. Yakovlev in Optical Properties of 2D Systems with Inte… (2003)

  18. No Access

    Chapter and Conference Paper

    II-VI Quantum Wells with High Carrier Densities and in High Magnetic Fields

    Optical properties of a two-dimensional electron gas in ZnSe/(Zn,Be,Mg)Se quantum well structures have been examined by means of photoluminescence and reflectivity techniques in external magnetic fields up to ...

    D. R. Yakovlev, G. V. Astakhov, W. Ossau in Optical Properties of 2D Systems with Inte… (2003)

  19. No Access

    Article

    Inhomogeneous broadening of exciton lines in magneto-optical reflection from CdTe/CdMgTe quantum wells

    A spectroscopic method is proposed to determine parameters of homogeneous and inhomogeneous broadening for excitons confined in semiconductor quantum wells with free carriers. By measuring the optical reflecti...

    G.V. Astakhov, V.A. Kosobukin in The European Physical Journal B - Condense… (2001)

  20. No Access

    Chapter

    Combined Exciton-Electron Processes in Modulation Doped Quantum Well Structures

    Combined exciton-electron processes were studied in modulation doped quantum well structures in magnetic fields. In the case of such combined processes an incident photon creates an exciton and induces a trans...

    V. P. Kochereshko, D. R. Yakovlev in Optical Properties of Semiconductor Nanost… (2000)

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