Abstract
EPR studies of transition-element ions in SiC and GaN and of erbium in 6H-SiC are reported. Data are presented on Sc2+ ions and scandium acceptors, and chromium and molybdenum ions in various charge states in SiC. A study was made of nickel and manganese in nominally pure GaN grown by the sandwich sublimation method. The first EPR investigation of Er in 6H-SiC is reported. Erbium was identified from the hfs of the EPR spectra. Various possible models of erbium centers in silicon carbides are discussed. Strong room-temperature erbium-ion luminescence was observed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
P. G. Baranov, I. V. Il’in, E. N. Mokhov, A. D. Roenkov, and V. A. Khramtsov, Fiz. Tverd. Tela (St. Petersburg) 39, 52 (1997) [Phys. Solid State 39, 44 (1997)].
P. G. Baranov, V. A. Khramtsov, and E. N. Mokhov, Semicond. Sci. Technol. 9, 1340 (1994).
J. Baur, M. Kunzer, K. F. Dombrowski, U. Kaufmann, J. Schneider, P. G. Baranov, and E. N. Mokhov, Inst. Phys. Conf. Ser. 155, No. 12, 933 (1997).
P. G. Baranov, I. V. Ilyin, and E. N. Mokhov, Solid State Commun. 101, 611 (1997).
P. G. Baranov, I. V. Ilyin, and E. N. Mokhov, Solid State Commun. 103, 291 (1997).
P. G. Baranov, I. V. Il’in, E. N. Mokhov, A. B. Pevtsov, and V. A. Khramtsov, Fiz. Tverd. Tela (St. Petersburg) 41, No. 38 (1999) [Phys. Solid State 41, 32 (1999)].
Author information
Authors and Affiliations
Additional information
Fiz. Tverd. Tela (St. Petersburg) 41, 865–867 (May 1999)
Rights and permissions
About this article
Cite this article
Baranov, P.G., Il’in, I.V., Mokhov, E.N. et al. Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: Recent EPR studies. Phys. Solid State 41, 783–785 (1999). https://doi.org/10.1134/1.1130872
Issue Date:
DOI: https://doi.org/10.1134/1.1130872