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Chapter
Techniques for Studying Ion Implantation In Diamond
Measurements using electron paramagnetic resonance, optical absorption, Raman scattering and luminescence have been performed in ion implanted type IIa diamonds. Results are described which show how these tech...
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Article
Defect annealing in phosphorus implanted silicon: A D.L.T.S. study
Deep-level transient spectroscopy (D.L.T.S.) has been applied to the determination of defects in ion implanted silicon. Preliminary results concerning defects introduced by 130 KeV phosphorous ion implantation...
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Chapter
Minority Carrier Traps in Electron Irradiated n-Type Germanium
Minority carrier traps created by electron irradiation at room temperature in slightly doped n-type germanium have been studied using transient capacitance spectroscopy. Levels at 0.16 (H1), 0.30 (H2), 0.37 (H3) ...
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Article
Steady State and Transient Capacitance Measurements of the Energy Levels of a Low Angle Tilt Boundary in a Germanium Bicrystal
Steady state and transient capacitance (DLTS) measurements have been performed on a low angle tilt boundary in a germanium bicrystal, in combination with an electron microscope study of the boundary dislocatio...
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Article
Comparison between Thermal and Laser Annealing in Ion-Implanted Silicon.
N-type, 1015−1016 cm−3 doped, Fz, Silicon has been implanted with 1 to 4 × 1012 cm−2, 100 or 300 keV, As ions. The nature and concentration of the defects has been monitored using Deep Level transient Spectroscop...
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Article
Electrical Defect Analysis Following Pulsed Laser Irradiation of Unimplanted GaAs
Current-voltage, capacitance-voltage and defect spectroscopy techniques are used to characterize the electrical properties of GaAs crystals after pulsed laser irradiation with either a Nd-YAG or a Ruby laser. ...
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Article
Defects in pulsed laser and thermal processed ion implanted silicon
The evolution of the nature and concentration of the defects produced by 100 or 300 keV As ions at fluences 1 to 4×10−12 cm−2 inn-type, Fz Silicon doped with 1015 to 1016 cm−3 has been studied as function of ther...
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Article
Photoluminescence and Electrical Properties of Epitaxial GaAs Grown by Close Space Vapor Transport
The growth of epitaxial GaAs layers on semi-insulating substrates, using high purity GaAs as source material has been obtained by the so-called lose Space Vapor Transport technique. The thermodynamical conditi...
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Article
DLTS Study of Oxide Traps Near the Si-SiO2 Interface
We have used the DLTS (Deep Level Transient Spectroscopy) technique to characterize the traps of the oxide layer near the Si-SiO2 interface. Using the so-called saturating pulse DLTS, no saturation is observed wh...
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Article
Study of Spatial and Energetical Behavior of Slow Si-SiO2 Interface States By Tunnel-Dlts Under Fowler-Nordheim Stress
We study the behavior of the spatial and energetical distribution of the slow Si-SiO2 interface states (i.e. the defects located in the strained SiO2 layer near the interface) when the Metal-oxide-semiconductor (...
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Article
Point Defects, Dislocations in GaAs and Material Homogeneity
Combined positron annihilation and differential thermal analysis have shown that, in bulk GaAs materials, dislocations are decorated with vacancy related defects which recombine with As interstitials originati...
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Article
Thermal Stability of EL2 in GaAs
Different samples originating from the same LEC ingot have been used in order to determine the variation of the EL2 concentration versus depth after different types of thermal annealing ( 450 and 850°C : the t...
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Article
Electric Field Enhancement of Electron Emission from DX Centers and Consequences
We present data which show that electron emission from the DX center is sensitive to the Poole-Frenkel effect. We demonstrate that this result implies that the DX center is an L effective-mass state of the don...
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Article
DX Center in GaAs-GaAlAs Superlattices Suppression and Identification
The DX center has been studied by Deep Level Transient Spectroscopy in series of GaAs-Ga1-xAlxAs (x = 0.3) and GaAs-AlAs short period superlattices. The existence or not of this center can be understood if its en...
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Article
Bistable Defects Induced in GaAs by H2 Plasma Process
We have studied the effect of an H2 plasma (150 W ; 150°C ; 10, 20, 50, 100 s) on unannealed and annealed (850°C, AsH3 atmosphere) LEC GaAs material. Using Deep Level Transient Spectroscopy , we have shown that t...
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Article
EPR Studies of DX Center Related Paramagnetic States in Ga0.69 Al0.31 As:Sn
The electron paramagnetic resonance study of the DX center in Sn doped direct gap Ga0.69Al0.31 As shows the existence of a shallow effective mass like excited configuration of this defect. The photoexcitation spe...
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Article
The Metastability of the EL2 and DX Defects in GaAs and 3-5 Alloys
The metastability of the EL2 and DX defects in GaAs and Ga1-x AlxAs alloys is discussed in the context of recent hydrostatic pressure and photo-EPR results. A unified model is presented based on the metastable tr...
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Article
Correlation of the 0.8 eV Emission Band with the EL6 Center in GaAs
Combined photoluminescence and DLTS investigations of semi-insulating and n-type GaAs before and after a 15min, 850°C heat treatment under AsH3 reveal that the treatment which anneals the EL6 center leads also to...
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Article
Structural and Defect Study of Low Temperature INP Grown by Gas Source Molecular Beam Epitaxy
The low temperature growth procedure used in the case of GaAs to introduce high concentrations of deep traps such as arsenic antisite defects has been extended to the growth of InP by gas source molecular beam...
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Article
Characterization of closed space vapor transport GaP epitaxial layers
The growth of homoepitaxial GaP layers using Te-doped GaP as source material has been obtained by the so-called closed space vapor transport technique. The photoluminescence study shows that these layers, when...
