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Article
Electric Properties of AlGaN/GaN/Si High electron Mobility Transistors
This work investigated the electrical properties in AlGaN/GaN/Si HEMTsgrown by molecular beam epitaxy. The electrical behavior have been investigated using by electric permittivity, modulus formalism and condu...
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Article
Impedance Characterization of AlGaN/GaN/Si High Electron Mobility Transistors
AlGaN/GaN HEMTs grown on high resistive silicon (111) substrate grown by molecular beam epitaxy have been investigated using impedance measurements. Passivation of the HEMT devices is made in order to improve ...
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Article
Frequency and temperature dependent dielectric properties in the lead free Ba0.75Ce0.033Sr0.2Ti0.96Sn0.04O3 ceramics
Ba0.75Ce0.033Sr0.2Ti0.96Sn0.04O3 ceramic was prepared by solid-state route. X-ray diffraction (XRD) analysis of the compound shows a tetragonal phase with the space group of P4mm at room temperature. The imaginar...
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Article
La0.67Pb0.33−x K x MnO3 perovskites synthesized by sol–gel method: the effect of potassium substitution on the magnetic and electrical properties
The influence of the potassium substitution for Pb ions in the mixed valence perovskites La0.67Pb0.33−x K x MnO3 (0 ≤ x ≤ 0.15) was investigated by X-ray ...
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Article
Open AccessCharacterization of Left-border Flanking Sequences of T-DNA Integration in Transgenic Rice (Oryza sativa L.) Expressing cry1Ab
To understand the molecular details of T-DNA integration, the left border (LB) sequences and flanking plant DNA of 16 independent T-DNA insertions in transgenic cry1Ab rice were analyzed by an inverse PCR approac...
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Article
Electronic properties of multi-quantum dot structures in Cd 1-xZn xS alloy semiconductors
In this paper, we present a theoretical study of the quantized electronic states in Cd1-xZnxS quantum dots. The shape of the confining potential, the subband energies and their eigen envelope wave functions are ...
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Article
Correlation of the 0.8 eV Emission Band with the EL6 Center in GaAs
Combined photoluminescence and DLTS investigations of semi-insulating and n-type GaAs before and after a 15min, 850°C heat treatment under AsH3 reveal that the treatment which anneals the EL6 center leads also to...