Abstract
The metastability of the EL2 and DX defects in GaAs and Ga1-x AlxAs alloys is discussed in the context of recent hydrostatic pressure and photo-EPR results. A unified model is presented based on the metastable trap** of carriers in excited effective-mass (EM) states derived from secondary conduction band (CB) minima. The metastability is attributed to small lattice relaxation effects.
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von Bardeleben, H.J., Bourgoin, J.C. The Metastability of the EL2 and DX Defects in GaAs and 3-5 Alloys. MRS Online Proceedings Library 163, 799–804 (1989). https://doi.org/10.1557/PROC-163-799
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DOI: https://doi.org/10.1557/PROC-163-799