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  1. No Access

    Article

    Gas Sensor Using an Aluminium-Porous Silicon Junction Application to the Detection of Non-Zero Molecular Dipole Moment

    Porous silicon is known to be sensitive to moisture. Using an aluminium-porous p+ silicon junction, we have realized a sensor which dc current increases up to two orders of magnitude in the presence of ammoniac. ...

    D. Stievenard, D. Deresmes in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    STM measurements of barrier height on Si(111)-7×7 and GaAs(110) cleaved surfaces using I(z), z(V) and I(z(V),V) techniques

     Torr. As the barrier height measurement is sensitive to the nature of the apex, we first focus on the quality and the reproducibility of the tips. Polycrystalline tungsten tips are first prepared by electroch...

    B. Grandidier, J.P. Nys, D. Stievenard, X. de la Bro&ıuml;se… in Applied Physics A (1998)

  3. No Access

    Article

    Rutherford Backscattering and Photoluminescence Studies of Erbium Implanted GaAs

    The results of parallel RBS and photoluminescence studies of erbium implanted GaAs are presented. Low dose implantations do not produce any significant PL signals, and the dose must be in the range le14 to le1...

    S. E. Daly, M. O. Henry, E. Alves, J. C. Soares… in MRS Online Proceedings Library (1996)

  4. No Access

    Article

    Characterization of closed space vapor transport GaP epitaxial layers

    The growth of homoepitaxial GaP layers using Te-doped GaP as source material has been obtained by the so-called closed space vapor transport technique. The photoluminescence study shows that these layers, when...

    J. Mimila-Akroyo, J. Diaz, M. B. Derbali, H. Maaref… in Journal of Electronic Materials (1996)

  5. No Access

    Article

    D.C Current-Voltage Characteristics and Admittance Spectroscopy of an Al-Porous Si Barrier

    We present the temperature and frequency dependence of the current-voltage (I-V) characteristics of Al barriers deposited on porous Si grown on p-type Si substrates. These barriers exhibit a rectifying behavio...

    K. Khirouni, J. C. Bourgoin, K. Borgi, H. Maaref… in MRS Online Proceedings Library (1996)

  6. No Access

    Article

    Interaction Between Defects and Tunneling Effect in Heterostructures

    Due to the reduced size of quantum devices, defects play a dominant role in their electrical behaviour. We theoretically show that defects can change the electrical behaviour of a single barrier or a quantum w...

    D. Stievenard, M. Lannoo in MRS Online Proceedings Library (1993)

  7. No Access

    Chapter

    Defect and Structure Analysis of n+- and p+-type Porous Silicon by the Electron Paramagnetic Resonance Technique

    we have applied X-band electron paramagnetic resonance spectroscopy to the study of the dopants in n+-type and the defects in n+- and p+-type porous silicon of both high (≈80%) and low (≈50%) porosity. Surprising...

    H. J. von Bardeleben, D. Stievenard… in Optical Properties of Low Dimensional Sili… (1993)

  8. No Access

    Article

    Bistable Defects Induced in GaAs by H2 Plasma Process

    We have studied the effect of an H2 plasma (150 W ; 150°C ; 10, 20, 50, 100 s) on unannealed and annealed (850°C, AsH3 atmosphere) LEC GaAs material. Using Deep Level Transient Spectroscopy , we have shown that t...

    X. Boddaert, D. Vuillaume, D. Stievenard, J. C. Bourgoin… in MRS Online Proceedings Library (1989)

  9. No Access

    Article

    Thermal Stability of EL2 in GaAs

    Different samples originating from the same LEC ingot have been used in order to determine the variation of the EL2 concentration versus depth after different types of thermal annealing ( 450 and 850°C : the t...

    X. Boddaert, X. Letartre, D. Stievenard, J. C. Bourgoin in MRS Online Proceedings Library (1988)

  10. No Access

    Article

    Point Defects, Dislocations in GaAs and Material Homogeneity

    Combined positron annihilation and differential thermal analysis have shown that, in bulk GaAs materials, dislocations are decorated with vacancy related defects which recombine with As interstitials originati...

    J.C. Bourgoin, H.J. Von Bardeleben, H. Lim, D. Stievenard in MRS Online Proceedings Library (1987)