Abstract
The electron paramagnetic resonance study of the DX center in Sn doped direct gap Ga0.69Al0.31 As shows the existence of a shallow effective mass like excited configuration of this defect. The photoexcitation spectrum for this transformation has a threshold at 0.8 eV; the photoionization of the DX center is not a transition to the lowest r conduction band as previously assumed. After photoexcitation additional paramagnetic defects are observed.
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von Bardeleben, H.J., Bourgoin, J.C., Basmaji, P. et al. EPR Studies of DX Center Related Paramagnetic States in Ga0.69 Al0.31 As:Sn. MRS Online Proceedings Library 148, 439–444 (1989). https://doi.org/10.1557/PROC-148-439
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DOI: https://doi.org/10.1557/PROC-148-439