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    Characterization of closed space vapor transport GaP epitaxial layers

    The growth of homoepitaxial GaP layers using Te-doped GaP as source material has been obtained by the so-called closed space vapor transport technique. The photoluminescence study shows that these layers, when...

    J. Mimila-Akroyo, J. Diaz, M. B. Derbali, H. Maaref… in Journal of Electronic Materials (1996)