Skip to main content

1 Result(s)

within H. Lakhdari Remove this filter

and

  1. No Access

    Article

    Study of Spatial and Energetical Behavior of Slow Si-SiO2 Interface States By Tunnel-Dlts Under Fowler-Nordheim Stress

    We study the behavior of the spatial and energetical distribution of the slow Si-SiO2 interface states (i.e. the defects located in the strained SiO2 layer near the interface) when the Metal-oxide-semiconductor (...

    D. Vuillaume, H. Lakhdari, J. C. Bourgoin, R. Bouchakour… in MRS Online Proceedings Library (1987)