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  1. No Access

    Article

    Ion exchange effects in porous silicon

    We report an effect of alkaline metal ion incorporation into porous silicon (PS) structure from the electrolyte during anodic etching. Blue shift of the whole luminescence spectrum was obtained as a consequenc...

    B. Matvienko, P. Basmaji, V. Grivickas, A. Bernussi in MRS Online Proceedings Library (1993)

  2. No Access

    Article

    Investigation of Porous Silicon Films Structure by Optical Methods

    The structure of aged porous silicon (PS) has been investigated using reflectivity, photoluminescence (PL), optical absorption and photoconductivity decay. An optical anisotropy in a perpendicular to surface d...

    P. Basmaji, V. Grivickas, G. I. Surdutovich, R. Vitlina… in MRS Online Proceedings Library (1992)

  3. No Access

    Article

    Rapid Photoluminescence Intensity Degradation in Porous Silicon

    Rapid photoluminescence intensity degradation are observed in porous silicon layers formed at different preparation conditions. The decay rate, ranging from 0.5 to tens of seconds, is found to be a function of...

    P. Basmaji, A. A. Bernussi, J. C. Rossi, B. Matvienko in MRS Online Proceedings Library (1992)

  4. No Access

    Article

    EPR Studies of DX Center Related Paramagnetic States in Ga0.69 Al0.31 As:Sn

    The electron paramagnetic resonance study of the DX center in Sn doped direct gap Ga0.69Al0.31 As shows the existence of a shallow effective mass like excited configuration of this defect. The photoexcitation spe...

    H. J. von Bardeleben, J. C. Bourgoin, P. Basmaji… in MRS Online Proceedings Library (1989)

  5. No Access

    Chapter and Conference Paper

    Studies of Magnetotransport Measurements of Resonant DX Centres in Heavily Doped GaAs and (AlGa)As Alloys

    The DX centre in heavily n-doped GaAs and (AlGa)As is investigated using hydrostatic pressure. The DX level is identified with a simple substitutional donor level associated with higher conduction band minima....

    J. C. Portal, L. Dmowski, D. Lavielle… in High Magnetic Fields in Semiconductor Phys… (1989)