Abstract
We study the behavior of the spatial and energetical distribution of the slow Si-SiO2 interface states (i.e. the defects located in the strained SiO2 layer near the interface) when the Metal-oxide-semiconductor (MOS) structure is submitted to a high field electrons injection from the Si substrate. We have analysed the creation kinetics of these slow states in order to compare with the behavior of the fast interface states which are better studied. We demonstrate that the fast interface states are more rapidly generated than the slow states and that the creation kinetics of fast states reach a saturation at lower injected charge. We also find that the fast interface states generation is independent from the energetical location of the states in the Si bandgap. For the generation of slow states, we observe a weak dependence on the energetical location of the defects in the SiO2 bandgap, and a strong dependence on the depth location from the Si-SiO2 interface.
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Vuillaume, D., Lakhdari, H., Bourgoin, J.C. et al. Study of Spatial and Energetical Behavior of Slow Si-SiO2 Interface States By Tunnel-Dlts Under Fowler-Nordheim Stress. MRS Online Proceedings Library 105, 235–240 (1987). https://doi.org/10.1557/PROC-105-235
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DOI: https://doi.org/10.1557/PROC-105-235