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  1. No Access

    Article

    Structure and optical properties of thin Al2O3 films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates

    Structural analysis and optical spectroscopy are used to study the properties of ultrathin Al2O3 films deposited in an ion-plasma sputtering installation. It is possible to demonstrate that the technological meth...

    P. V. Seredin, D. L. Goloschapov, A. N. Lukin, A. S. Len’shin… in Semiconductors (2014)

  2. No Access

    Article

    Passivation of the GaP(111) surface by treatment in selenium vapors

    Results of examination of structural phase transitions on the GaP(111) surface after heat treatment in selenium vapors in a vacuum chamber with a quasi-closed volume are described. The electrophysical characte...

    N. N. Bezryadin, G. I. Kotov, I. N. Arsent’ev, S. V. Kuzubov… in Technical Physics Letters (2014)

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    Article

    Photoluminescence properties of heavily doped heterostructures based on (Al x Ga1 − x As)1 − y Si y solid solutions

    It has been established that the photoluminescence spectra of heavily doped heterostructures based on Al x Ga1 − x As)1 − y Si ...

    P. V. Seredin, E. P. Domashevskaya, V. E. Ternovaya… in Physics of the Solid State (2013)

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    X-ray diffraction studies of heterostructures based on solid solutions Al x Ga1 − x As y P1 − y : Si

    The growth of MOCVD-hydride epitaxial heterostructures based on ternary solid solutions Al x Ga1−x As heavily doped with phosphorus and silicon has been s...

    P. V. Seredin, V. E. Ternovaya, A. V. Glotov, A. S. Len’shin… in Physics of the Solid State (2013)

  5. No Access

    Article

    Semiconductor lasers with internal wavelength selection

    Laser diodes with a deep built-in trapezoidal large-period diffraction grating have been developed on the basis of InGaAs/GaAs/AlGaAs heterostructures. The electroluminescence and stimulated emission spectra a...

    V. V. Zolotarev, A. Yu. Leshko, A. V. Lyutetskii, D. N. Nikolaev… in Semiconductors (2013)

  6. No Access

    Article

    Water adlayers on aluminum oxide thin films

    The effect of saturated water vapor on the performance of quartz cavities covered by magnetronsputtered oxide films is considered. A technique for precisely estimating the influence of small vapor concentratio...

    D. S. Saiko, V. V. Ganzha, S. A. Titov, I. N. Arsent’ev… in Technical Physics (2009)

  7. No Access

    Article

    The effects of the porous buffer layer and do** with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

    In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the por...

    P. V. Seredin, N. N. Gordienko, A. V. Glotov, I. A. Zhurbina… in Semiconductors (2009)

  8. No Access

    Article

    Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers

    The effect of the thickness of embedded InAs and GaAs layers on the infrared reflection spectra of lattice vibrations for AlInAs/InAs/AlInAs, InGaAs/GaAs/InGaAs, and AlInAs/InGaAs/GaAs/InGaAs/AlInAs multilayer...

    P. V. Seredin, É. P. Domashevskaya, A. N. Lukin, I. N. Arsent’ev… in Semiconductors (2008)

  9. No Access

    Article

    Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga x In1 − x As y P1 − y /GaInP/GaAs(001) heterostructures

    Structural and optical properties of two- and three-layer epitaxial heterostructures containing GaInP/Ga x In1 − x As y

    E. P. Domashevskaya, N. N. Gordienko, N. A. Rumyantseva, B. L. Agapov… in Semiconductors (2008)

  10. No Access

    Article

    Passivating gallium arsenide surface by gallium chalcogenide

    We have studied the protective properties of thin films of gallium selenide formed by the method of heterovalent substitution on the surface of GaAs substrates. The data of transmission (Hitachi H-800) and sca...

    N. N. Bezryadin, G. I. Kotov, S. V. Kuzubov, I. N. Arsent’ev… in Technical Physics Letters (2008)

  11. No Access

    Article

    Scaled nano-and microrelief of ordering regions in Al x Ga1 − x As/GaAs(100) epitaxial heterostructures

    The Al x Ga1 − x As/GaAs(100) heterostructures grown by MOS hydride epitaxy were studied using atomic force and scanning electron microscopy. Regions with an orde...

    E. P. Domashevskaya, P. V. Seredin… in Journal of Surface Investigation. X-ray, S… (2008)

  12. No Access

    Article

    Double-band generation in quantum-well semiconductor laser at high injection levels

    Spectral and emission-power characteristics of semiconductor lasers based on quantum-dimensional asymmetric heterostructures with separate confinement in a system of InGaAs/GaAs/AlGaAs alloys are studied in th...

    D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. Yu. Leshko… in Semiconductors (2007)

  13. No Access

    Article

    Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation

    Spectral and light-current characteristics of separate-confinement lasers that are based on InAl-GaAs/InP and InGaAsP/InP alloys and emit in the wavelength range of 1.5–1.8 μm are studied at high excitation le...

    D. A. Vinokurov, V. A. Kapitonov, A. V. Lyutetskiĭ, N. A. Pikhtin… in Semiconductors (2007)

  14. No Access

    Article

    Beryllium diffusion and influence on the luminescent and electrical properties of indium phosphide

    The diffusion of beryllium in indium phosphide (InP) has been studied. The temperature dependence of the diffusion coefficient can be described by the formula D = 6.3 × 10−5exp(−1.4/kT) [cm2/s], which yields D = ...

    V. V. Agaev, I. N. Arsent’ev, S. G. Metreveli… in Technical Physics Letters (2006)

  15. No Access

    Article

    Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area

    MOCVD and LPE technologies of deposition of GaAs and AlGaAs layers onto (100) GaAs substrates with a developed surface area are developed. Porous GaAs layers and surface microprofiles of dendrite and quasi-gra...

    I. N. Arsent’ev, A. V. Bobyl’, O. Yu. Borkovskaya, D. A. Vinokurov… in Semiconductors (2006)

  16. No Access

    Article

    Diffusion-barrier contacts based on the TiN and Ti(Zr)Bx interstitial phases in the microwave diodes for the range of 75–350 GHz

    A new technology for thermally stable ohmic contacts with diffusion barriers based on the amorphous TiN and Ti(Zr)Bx interstitial phases is used in the development of microwave diodes for the millimeter region (w...

    N. S. Boltovets, V. N. Ivanov, A. E. Belyaev, R. V. Konakova… in Semiconductors (2006)

  17. No Access

    Article

    Infrared reflectance spectra and morphologic features of the surface of epitaxial AlxGa1−x As/GaAs(100) heterostructures with the ordered AlGaAs2 phase

    The infrared reflectance spectra associated with lattice vibrations in the epitaxial AlxGa1−x As/GaAs(100) heterostructures with different Al content in the cation sublattice are studied. The structures are grown...

    É. P. Domashevskaya, P. V. Seredin, A. N. Lukin, L. A. Bityutskaya… in Semiconductors (2006)

  18. No Access

    Article

    Formation of nanostructures in a Ga2Se3/GaAs system

    The topology of GaAs(100) and GaAs(111) surfaces before and after short treatments in Se vapor is studied by atomic-force microscopy. On the basis of this study, as well as ellipsometry and electron microscopy...

    N. N. Bezryadin, G. I. Kotov, I. N. Arsent’ev, A. A. Starodubtsev in Semiconductors (2005)

  19. No Access

    Article

    Vegard’s law and superstructural phases in AlxGa1−x As/GaAs(100) epitaxial heterostructures

    The lattice constants of AlxGa1−x As epitaxial alloys with various AlAs (x) contents are determined for AlxGa1−x As/GaAs(100) heterostructures grown by MOC-hydride epitaxy using X-ray diffractometry and an X-ray...

    É. P. Domashevskaya, P. V. Seredin, É. A. Dolgopolova, I. E. Zanin… in Semiconductors (2005)

  20. No Access

    Article

    Using axisymmetric potential in modeling crystal growth from melt

    A model describing the growth of AIIIAV semiconductor compounds from a melt has been developed based on an axisymmetric potential of pair interaction between atoms in the growing crystal and in the melt. Numerica...

    E. A. Shunikov, Yu. P. Khukhryansky, I. N. Arsent’ev in Technical Physics Letters (2005)

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