Abstract
In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Do** of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.
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Original Russian Text © P.V. Seredin, N.N. Gordienko, A.V. Glotov, I.A. Zhurbina, E.P. Domashevskaya, I.N. Arsent’ev, M.V. Shishkov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 8, pp. 1137–1141.
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Seredin, P.V., Gordienko, N.N., Glotov, A.V. et al. The effects of the porous buffer layer and do** with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures. Semiconductors 43, 1098–1101 (2009). https://doi.org/10.1134/S1063782609080247
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DOI: https://doi.org/10.1134/S1063782609080247