Abstract
A model describing the growth of AIIIAV semiconductor compounds from a melt has been developed based on an axisymmetric potential of pair interaction between atoms in the growing crystal and in the melt. Numerical experiments performed according to the proposed model allowed the density of the flux of atoms deposited onto the crystal surface at the initial growth stage to be determined.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 31, No. 4, 2005, pp. 83–87.
Original Russian Text Copyright © 2005 by Shunikov, Khukhryansky, Arsent’ev.
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Shunikov, E.A., Khukhryansky, Y.P. & Arsent’ev, I.N. Using axisymmetric potential in modeling crystal growth from melt. Tech. Phys. Lett. 31, 173–175 (2005). https://doi.org/10.1134/1.1877639
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DOI: https://doi.org/10.1134/1.1877639