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  1. No Access

    Article

    High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement

    Laser diodes with a wavelength of 808 nm obtained by the MOC-hydride epitaxy in a system of the AlGaAs alloys have been studied. Parameters of the laser diodes with symmetric narrow and asymmetric wide wavegui...

    A. Yu. Andreev, S. A. Zorina, A. Yu. Leshko, A. V. Lyutetskiy… in Semiconductors (2009)

  2. No Access

    Article

    Double-band generation in quantum-well semiconductor laser at high injection levels

    Spectral and emission-power characteristics of semiconductor lasers based on quantum-dimensional asymmetric heterostructures with separate confinement in a system of InGaAs/GaAs/AlGaAs alloys are studied in th...

    D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. Yu. Leshko… in Semiconductors (2007)

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    Article

    Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers

    Heterostructures comprising highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers have been grown by the metalorganic chemical vapor deposition method on InP(100) substrates. The photolum...

    D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, D. N. Nikolaev… in Technical Physics Letters (2006)

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    Article

    Photoluminescence of heterostructures with highly strained Ga0.76In0.24As quantum wells separated by GaAsyP1−y compensating barriers

    Based on the results of model calculations and the data of photoluminescence measurements and transmission electron microscopy, the optimum composition (GaAs0.85P0.15) of compensating barriers for a structure wit...

    V. V. Shamakhov, D. A. Vinokurov, A. L. Stankevich… in Technical Physics Letters (2005)

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    Article

    High-power laser diodes based on asymmetric separate-confinement heterostructures

    Asymmetric separate-confinement laser heterostructures with ultrawide waveguides based on AlGaAs/GaAs/InGaAs solid solutions, with an emission wavelength of ∼1080 nm, are grown by MOCVD. The optical and electr...

    D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. V. Murashova… in Semiconductors (2005)

  6. No Access

    Article

    Photoluminescence of GaAsP/GaInAsP Type-II heterojunctions

    We have studied the photoluminescence of heterostructures based on solid solution systems of the GaInP/GaAsP/GaInAsP type grown by metalorganic chemical vapor deposition method. It is established that GaAs0.77P0....

    D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov… in Technical Physics Letters (2004)

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    Article

    MOCVD GaInAsP/GaInP/AlGaInP laser structures emitting at 780 nm

    Metal-organic chemical vapor deposition (MOCVD) was used to form laser heterostructures in the system of GaInAsP/GaInP/AlGaInP solid solutions. The design of the laser structure was chosen on the basis of the ...

    D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. Yu. Leshko… in Semiconductors (2003)