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  1. No Access

    Article

    XPS study of the oxidation of nanosize Ni/Si(100) films

    The XPS (X-ray photoelectron spectroscopy) study of nickel oxide nanolayers obtained by magnetron sputtering of the metal and its subsequent oxidation in air at different temperatures (400°C and 1000°C) was pe...

    É. P. Domashevskaya, S. V. Ryabtsev, V. A. Terekhov… in Journal of Structural Chemistry (2011)

  2. No Access

    Article

    Morphology of tin oxide nanocrystals grown by vapor-phase transport method

    Technological regimes of vapor-phase transport (VPT) synthesis of filamentous nanocrystals (nanowhiskers) of tin oxide (SnO2) are considered. It is experimentally established that the morphology of VPT-grown SnO2

    S. V. Ryabtsev, N. M. A. Khadiya, É. P. Domashevskaya in Technical Physics Letters (2010)

  3. No Access

    Article

    Preparation of porous silicon nanocomposites with iron and cobalt and investigation of their electron structure by X-ray spectroscopy techniques

    A method for the galvanic deposition of iron-group metals onto porous silicon (por-Si) substrates has been developed. The morphology and phase composition of por-Si nanocomposites containing galvanically depos...

    V. M. Kashkarov, A. S. Len’shin, B. L. Agapov… in Technical Physics Letters (2009)

  4. No Access

    Article

    Electronic and energy structure and X-ray spectra of Zn3P2 and Cd3P2 and their solid solution (Cd0.5Zn0.5)3P2

    X-ray spectra were obtained for Zn3P2 and Cd3P2 semiconductors and their solid solution (Cd0.5Zn0.5)3P2. X-ray photoelectron spectra were recorded for Zn3P2 and (Cd0.5Zn0.5)3P2. Self-consistent calculations of th...

    A. A. Lavrentiev, B. V. Gabrel’yan, V. B. Vorzhev… in Journal of Structural Chemistry (2008)

  5. No Access

    Article

    XPS and XANES studies of SnO x nanolayers

    This paper presents the results of our XPS (X-ray photoelectron spectroscopy) and XANES (X-ray absorption near edge structure) studies of tin oxide nanolayers obtained by magnetron spraying of the metal and it...

    É. P. Domashevskaya, S. V. Ryabtsev, S. Yu. Turishchev… in Journal of Structural Chemistry (2008)

  6. No Access

    Article

    Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers

    The effect of the thickness of embedded InAs and GaAs layers on the infrared reflection spectra of lattice vibrations for AlInAs/InAs/AlInAs, InGaAs/GaAs/InGaAs, and AlInAs/InGaAs/GaAs/InGaAs/AlInAs multilayer...

    P. V. Seredin, É. P. Domashevskaya, A. N. Lukin, I. N. Arsent’ev… in Semiconductors (2008)

  7. No Access

    Article

    Kinetics of resistive response of SnO2 − x thin films in gas environment

    Data on the gas sensitivity of SnO2 − x thin films in oxygen and hydrogen environment are obtained. The films were fabricated by oxidizing metallic tin layers in air at various temperatur...

    S. V. Ryabtsev, A. V. Yukish, S. I. Khango, Yu. A. Yurakov… in Semiconductors (2008)

  8. No Access

    Article

    XANES and USXES studies of interatomic interactions in (Co41Fe39B20) x (SiO2)1 − x nanocomposites

    The electronic structure and phase composition of (Co41Fe39B20) x (SiO2)1 − x nanocomposites are studied by x-ray absorption near-edge spectroscopy, whic...

    É. P. Domashevskaya, S. A. Storozhilov, S. Yu. Turishchev… in Physics of the Solid State (2008)

  9. No Access

    Article

    Optical properties of SnO2−x nanolayers

    Specific features in the optical absorption spectra and capacitance-voltage characteristics of SnO2−x nanolayers have been observed. These features are determined by the surface and intergranular...

    É. P. Domashevskaya, S. V. Ryabtsev, E. A. Tutov… in Technical Physics Letters (2006)

  10. No Access

    Article

    Infrared reflectance spectra and morphologic features of the surface of epitaxial AlxGa1−x As/GaAs(100) heterostructures with the ordered AlGaAs2 phase

    The infrared reflectance spectra associated with lattice vibrations in the epitaxial AlxGa1−x As/GaAs(100) heterostructures with different Al content in the cation sublattice are studied. The structures are grown...

    É. P. Domashevskaya, P. V. Seredin, A. N. Lukin, L. A. Bityutskaya… in Semiconductors (2006)

  11. No Access

    Article

    A study of the local electronic and atomic structure in a-SixC1−x amorphous alloys using ultrasoft X-ray emission spectroscopy

    X-ray spectroscopy has been used to obtain data on the local electronic and atomic structure of a-SixC1−x :H(Er) alloys produced by plasma-enhanced chemical vapor deposition (PECVD) with various relative amounts ...

    V. A. Terekhov, E. I. Terukov, I. N. Trapeznikova, M. Kashkarov… in Semiconductors (2005)

  12. No Access

    Article

    Vegard’s law and superstructural phases in AlxGa1−x As/GaAs(100) epitaxial heterostructures

    The lattice constants of AlxGa1−x As epitaxial alloys with various AlAs (x) contents are determined for AlxGa1−x As/GaAs(100) heterostructures grown by MOC-hydride epitaxy using X-ray diffractometry and an X-ray...

    É. P. Domashevskaya, P. V. Seredin, É. A. Dolgopolova, I. E. Zanin… in Semiconductors (2005)

  13. No Access

    Article

    Influence of ultrashort pulses of electromagnetic radiation on parameters of metal-insulator-semiconductor structures

    The effect of pulsed electromagnetic radiation with a leading-edge duration of 1.4×10−9 s and a total pulse duration of ∼11.5×10−9 s, a repetition rate of 10 kHz, and various pulse energies (≲2.4×10−4 J) on Al/Si...

    V. A. Terekhov, A. N. Man’ko, E. N. Bormontov, V. N. Levchenko… in Semiconductors (2004)

  14. No Access

    Article

    Synchrotron investigations of the specific features in the electron energy spectrum of silicon nanostructures

    The Si L 2, 3 x-ray absorption near-edge structure (XANES) spectra of porous silicon nanomaterials and nanostructures with epitaxial silicon layers doped by erbium or containing germanium quantum dots are measure...

    É. P. Domashevskaya, V. A. Terekhov, V. M. Kashkarov… in Physics of the Solid State (2004)

  15. No Access

    Article

    Influence of water vapor adsorption on the C-V characteristics of heterostructures containing porous silicon

    Porous silicon (por-Si) is prepared by the electrochemical etching of single-crystal n-silicon in an aqueous-alcoholic solution of hydrofluoric acid in the presence of hydrogen peroxide oxidizer. The dependence o...

    E. A. Tutov, E. N. Bormontov, V. M. Kashkarov, M. N. Pavlenko… in Technical Physics (2003)

  16. No Access

    Article

    Synchrotron investigations of an electron energy spectrum in III–V-based nanostructures

    Using synchrotron radiation, the spectra of an X-ray absorption near-edge structure in a region of P-L 2, 3 edges of a band spectrum are obtained for the first time. The spectra give insight into the local densit...

    É. P. Domashevskaya, V. A. Terekhov, V. M. Kashkarov, S. Yu. Turishchev… in Semiconductors (2003)

  17. No Access

    Article

    E 0 photoreflectance spectra of semiconductor structures with a high density of interface states

    The results of a photoreflectance spectroscopy study of Ga2Se3/n-GaAs samples prepared by long-term annealing of GaAs wafers (n≈1017 cm−3) in a Se-vapor atmosphere are presented. It was established that no photov...

    R. V. Kuz’menko, É. P. Domashevskaya in Semiconductors (2002)

  18. No Access

    Article

    Study of the Influence of the Excitation Laser Power Density on the Intermediate-Field Electric Modulation Component of the GaAs Photoreflection E 0-Signal

    The influence of the excitation laser power density L on the amplitude A and characteristic time constant τ of the intermediate-field electric modulation component of photoreflection spectra measured in the regio...

    R. V. Kuz'menko, A. V. Ganzha, É. P. Domashevskaya in Russian Physics Journal (2002)

  19. No Access

    Article

    E 0 photoreflectance spectra of GaAs: Identification of the features related to impurity transitions

    In the room-temperature photoreflectance spectra of moderately doped crystalline GaAs wafers near the fundamental E 0 critical point, components corresponding to impurity transitions were identified. This was don...

    R. V. Kusmenko, É. P. Domashevskaya in Semiconductors (2002)

  20. No Access

    Article

    Influence of laser pump density on the characteristic time constant and the intermediate-field electromodulation E 0 component of the photoreflectance signal

    The influence of the laser pump density L on the intensity and the characteristic time constant of the intermediate-field electromodulation E 0 component of photoreflectance spectra in a direct-gap semiconductor ...

    R. V. Kuz’menko, A. V. Ganzha, É. P. Domashevskaya, S. Hildenbrandt… in Semiconductors (2002)

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