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  1. No Access

    Article

    Using axisymmetric potential in modeling crystal growth from melt

    A model describing the growth of AIIIAV semiconductor compounds from a melt has been developed based on an axisymmetric potential of pair interaction between atoms in the growing crystal and in the melt. Numerica...

    E. A. Shunikov, Yu. P. Khukhryansky, I. N. Arsent’ev in Technical Physics Letters (2005)

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    Article

    On the possible mechanism of crystal growth from melt under zero gravity conditions

    A possible mechanism of the growth of semiconductor single crystals from melt under zero gravity conditions is considered. The results of computer simulation performed by the molecular dynamics method for a th...

    S. V. Kotov, A. R. Lyutikov, Yu. P. Khukhryansky… in Technical Physics Letters (2002)