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  1. No Access

    Article

    Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment

    Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V2O5 and MnO2 nanolayers. The electrical parameters of the films (reverse-bias breakdo...

    B. V. Sladkopevtsev, G. I. Kotov, I. N. Arsentyev, I. S. Shashkin… in Semiconductors (2019)

  2. No Access

    Article

    Enhancing the Circular Polarization of Spin Light-Emitting Diodes by Processing in Selenium Vapor

    Spin light-emitting diodes based on InGaAs/GaAs heterostructures with a CoPt ferromagnetic injector were fabricated. It was demonstrated that the processing of these structures in selenium vapor prior to the d...

    M. V. Dorokhin, P. B. Demina, A. V. Budanov, Yu. N. Vlasov… in Technical Physics Letters (2019)

  3. No Access

    Article

    Gallium vacancy ordering in Ga2Se3 thin layers on Si(100), Si(111), and Si(123) substrates

    Thin Ga2Se3 layers deposited on silicon substrates with the (100), (111), and (123) orientations are studied by transmission electron microscopy and X-ray microanalysis. Some features and regularities of the stoi...

    S. V. Kuzubov, G. I. Kotov, Yu. V. Synorov in Crystallography Reports (2017)

  4. No Access

    Article

    Structural and phase transformation of A III B V(100) semiconductor surface in interaction with selenium

    Surfaces of GaAs(100), InAs(100), and GaP(100) substrates thermally treated in selenium vapor have been investigated by transmission electron microscopy and electron probe X-ray microanalysis. Some specific fe...

    N. N. Bezryadin, G. I. Kotov, S. V. Kuzubov in Crystallography Reports (2015)

  5. No Access

    Article

    Passivation of the GaP(111) surface by treatment in selenium vapors

    Results of examination of structural phase transitions on the GaP(111) surface after heat treatment in selenium vapors in a vacuum chamber with a quasi-closed volume are described. The electrophysical characte...

    N. N. Bezryadin, G. I. Kotov, I. N. Arsent’ev, S. V. Kuzubov… in Technical Physics Letters (2014)

  6. No Access

    Article

    Effect of the finishing treatment of a gallium arsenide surface on the spectrum of electron states in n-GaAs (100)

    Deep level transient spectroscopy has been used to study the effect of substrate pretreatment on the spectrum of electron states in Au/n-GaAs(100) Schottky diodes. Two bands of energy-distributed states have been...

    N. N. Bezryadin, G. I. Kotov, I. N. Arsentyev, Yu. N. Vlasov… in Semiconductors (2012)

  7. No Access

    Article

    Interface reconstruction in the Ga2Se3/GaAs(100) and In2Se3/InAs(100) nanoheterostructures

    The surface of GaAs(100) and InAs(100) substrates thermally treated in selenium vapor has been investigated by transmission electron microscopy (TEM) and reflection high-energy electron diffraction. Transmissi...

    N. N. Bezryadin, G. I. Kotov, S. V. Kuzubov, Ya. A. Boldyreva… in Crystallography Reports (2011)

  8. No Access

    Article

    Nanolayer of the A 2 III B 3 VI (111) phase with ordered cation vacancies on GaAs(111) and InAs(111)

    The surface of GaAs(111) and InAs(111) substrates has been investigated by transmission and scanning electron microscopy after thermal treatment in selenium vapor. A pseudomorphic growth of single-crystal phas...

    N. N. Bezryadin, G. I. Kotov, S. V. Kuzubov, B. L. Agapov in Crystallography Reports (2010)

  9. No Access

    Article

    A technique for recording and analyzing the isothermal relaxation of the capacitance of semiconductor heterostructures

    A technique for recording and processing the results of measuring the isothermal relaxation of the capacitance that allows determination of the parameters of the charge-localization centers in semiconductor he...

    N. N. Bezryadin, G. I. Kotov, A. V. Kadantsev… in Instruments and Experimental Techniques (2010)

  10. No Access

    Article

    Influence of gallium arsenide surface treatment in selenium vapors on subsurface defects

    Influence of GaAs surface treatment in selenium vapors on the parameters of electronic states in the subsurface GaAs regions is investigated by the methods of volt-ampere and volt-farad characteristics and iso...

    N. N. Bezryadin, G. I. Kotov, Yu. N. Vlasov, A. A. Starodubtsev… in Russian Physics Journal (2009)

  11. No Access

    Article

    Passivating gallium arsenide surface by gallium chalcogenide

    We have studied the protective properties of thin films of gallium selenide formed by the method of heterovalent substitution on the surface of GaAs substrates. The data of transmission (Hitachi H-800) and sca...

    N. N. Bezryadin, G. I. Kotov, S. V. Kuzubov, I. N. Arsent’ev… in Technical Physics Letters (2008)

  12. No Access

    Article

    Electron microscopy investigation of GaAs(100)-(Ga2Se3)-GaAs nanostructures

    The GaAs(100)-Ga2Se3 heterostructures have been investigated by transmission and scanning electron microscopy. The sequence of structural transformations at the GaAs(100) surface during treatment in selenium vapo...

    B. L. Agapov, N. N. Bezryadin… in Journal of Surface Investigation. X-ray, S… (2007)

  13. No Access

    Article

    Formation of nanostructures in a Ga2Se3/GaAs system

    The topology of GaAs(100) and GaAs(111) surfaces before and after short treatments in Se vapor is studied by atomic-force microscopy. On the basis of this study, as well as ellipsometry and electron microscopy...

    N. N. Bezryadin, G. I. Kotov, I. N. Arsent’ev, A. A. Starodubtsev in Semiconductors (2005)

  14. No Access

    Article

    Reconstruction and electron states of a Ga2Se3-GaAs heterointerface

    It is established by electron microscopy and electron diffraction analysis that the formation of Ga2Se3(110) layers on GaAs(100) and (111) surfaces during heat treatment of the latter in selenium vapor is accompa...

    B. L. Agapov, N. N. Bezryadin, G. I. Kotov, M. P. Sumets, I. N. Arsent’ev in Semiconductors (1999)

  15. No Access

    Article

    Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor

    The parameters of charge localization centers in the skin layer of gallium arsenide treated in selenium-arsenic vapor are investigated by deep-layer transient spectroscopy. It is established that the addition ...

    N. N. Bezryadin, É. P. Domashevskaya, G. I. Kotov, R. V. Kuz’menko… in Semiconductors (1999)