Abstract
Spectral and emission-power characteristics of semiconductor lasers based on quantum-dimensional asymmetric heterostructures with separate confinement in a system of InGaAs/GaAs/AlGaAs alloys are studied in the case of high pump levels in the pulsed mode of lasing (200 A, 100 ns, and 10 kHz). It is shown that, in lasers with a quantum-dimensional active region containing one or two levels of dimensional quantization, the spectrum consists of one or two lasing bands. It is established that the condition for inverse population of the second electron level and two-band lasing are attained due to leveling-off of the rate of stimulated recombination from the first electron level and a high density of states for the second level. It is shown that, in lasers with double-band lasing spectrum, the total emission spectrum exceeds appreciably the emission power of a laser with a single electron level and a single spectral band.
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Original Russian Text © D.A. Vinokurov, S.A. Zorina, V.A. Kapitonov, A.Yu. Leshko, A.V. Lyutetskiĭ, T.A. Nalet, D.N. Nikolaev, N.A. Pikhtin, N.A. Rudova, S.O. Slipchenko, Z.N. Sokolova, A.L. Stankevich, N.V. Fetisova, M.A. Khomylev, V.V. Shamakhov, K.S. Borshchev, I.N. Arsent’ev, A.D. Bondarev, M.K. Trukan, I.S. Tarasov, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 10, pp. 1247–1250.
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Vinokurov, D.A., Zorina, S.A., Kapitonov, V.A. et al. Double-band generation in quantum-well semiconductor laser at high injection levels. Semiconductors 41, 1230–1233 (2007). https://doi.org/10.1134/S1063782607100193
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DOI: https://doi.org/10.1134/S1063782607100193