Abstract
It has been established that the photoluminescence spectra of heavily doped heterostructures based on Al x Ga1 − x As)1 − y Si y solid solutions exhibit quenching of the main exciton bands of Al x Ga1 − x As ternary solid solutions and appearance of other maxima. The quenching of the main exciton bands can be associated both with the DX-center formation and with the change in the character of the band structure of (Al x Ga1 − x As)1 − y Si y quaternary solid solutions.
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Original Russian Text © P.V. Seredin, E.P. Domashevskaya, V.E. Ternovaya, I.N. Arsent’ev, D.A. Vinokurov, I.S. Tarasov, T. Prutskij, 2013, published in Fizika Tverdogo Tela, 2013, Vol. 55, No. 10, pp. 2055–2058.
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Seredin, P.V., Domashevskaya, E.P., Ternovaya, V.E. et al. Photoluminescence properties of heavily doped heterostructures based on (Al x Ga1 − x As)1 − y Si y solid solutions. Phys. Solid State 55, 2169–2172 (2013). https://doi.org/10.1134/S1063783413100302
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DOI: https://doi.org/10.1134/S1063783413100302