Abstract
Diethylsilane (DES) has been used as a precursor to produce silicon dioxide films by low pressure chemical vapor deposition. These films were synthesized in the temperature range of 350° to 475° C with the growth rate observed to follow an Arrhenius behavior with an apparent activation energy of 10 kcal/mol. The growth rate was seen to increase with higher pressure and to vary as a function of the square root of the O2 flow rate and O2/DES ratio. In both the pressure and the O2/DES ratio studies conducted at 400° C, there were points of abrupt cessation in deposition. The density and index of refraction of the films were found to be 2.25 g/cm3 and 1.46 respectively independent of deposition conditions. The etch rate of the films in a 25° C P-etch solution was observed to decrease with higher deposition or annealing temperatures reflecting densification of the material. Despite severe aspect ratios, the films were seen to exhibit good step coverage.
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© 1993 Springer Science+Business Media New York
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Chakravarthy, G.S., Levy, R.A., Grow, J.M., Attia, W.M. (1993). Low Temperature Synthesis and Characterization of Silicon Dioxide Films. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1588-7_18
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DOI: https://doi.org/10.1007/978-1-4899-1588-7_18
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