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14 Result(s)

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  1. No Access

    Article

    Broadband EPR Spectroscopy of Tb3+ and Fe2+ Ions in YAlO3 Single Crystals

    A YAlO3 crystal with an admixture of iron was studied by broadband EPR spectroscopy. Two types of paramagnetic centers were found. The energy level scheme of one of them is a singlet and a doublet with a splittin...

    G. R. Asatryan, G. S. Shakurov, I. V. Il’in, A. G. Petrosyan… in Physics of the Solid State (2021)

  2. No Access

    Article

    Group III Acceptors with Shallow and Deep Levels in Silicon Carbide: ESR and ENDOR Studies

    Results of investigations of Group III acceptors (B, Al, and Ga) in crystals of silicon carbide using the most informative electron spin resonance and electron nuclear double resonance methods are presented. S...

    I. V. Il’in, Yu. A. Uspenskaya, D. D. Kramushchenko… in Physics of the Solid State (2018)

  3. No Access

    Article

    Electronic structure and spatial distribution of the spin density of shallow nitrogen donors in the SiC lattice

    The discovery of unique magnetooptical properties of paramagnetic centers in silicon carbide, which make it possible to control spins of small arrays of centers of atomic sizes to single centers at room temper...

    M. V. Muzafarova, I. V. Il’in, A. N. Anisimov, E. N. Mokhov… in Physics of the Solid State (2016)

  4. No Access

    Article

    Point defects in silicon carbide as a promising basis for spectroscopy of single defects with controllable quantum states at room temperature

    The spin and optical properties of silicon vacancy defects in silicon carbide of the hexagonal 6H polytype have been investigated using photoluminescence, electron paramagnetic resonance, and X-band optically det...

    V. A. Soltamov, D. O. Tolmachev, I. V. Il’in, G. V. Astakhov… in Physics of the Solid State (2015)

  5. No Access

    Article

    Electron paramagnetic resonance detection of the giant concentration of nitrogen vacancy defects in sintered detonation nanodiamonds

    A giant concentration of nitrogen vacancy defects has been revealed by the electron paramagnetic resonance (EPR) method in a detonation nanodiamond sintered at high pressure and temperature. A high coherence o...

    A. A. Soltamova, I. V. Il’in, F. M. Shakhov, S. V. Kidalov, A. Ya. Vul’… in JETP Letters (2010)

  6. No Access

    Article

    Electron spin resonance detection and identification of nitrogen centers in nanodiamonds

    Individual nitrogen centers N0 and nitrogen pairs N 2 + have been detected and identified in natural diamond nanocrystals by means of the high-frequency electr...

    P. G. Baranov, I. V. Il’in, A. A. Soltamova, A. Ya. Vul’, S. V. Kidalov… in JETP Letters (2009)

  7. No Access

    Article

    Probing of the shallow donor and acceptor wave functions in silicon carbide and silicon through an EPR study of crystals with a modified isotopic composition

    The spatial distributions of the unpaired-electron wave functions of shallow N donors in SiC crystals and of shallow P and As donors in silicon crystals were determined by studying crystals with a modified con...

    P. G. Baranov, B. Ya. Ber, O. N. Godisov, I. V. Il’in… in Physics of the Solid State (2005)

  8. No Access

    Article

    EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide

    It is shown that intrinsic defects responsible for the semi-insulating properties of SiC represent Si-C divacancies in a neutral state (V Si-V C)0, which have the triplet ground state. The energy level scheme and...

    P. G. Baranov, I. V. Il’in, E. N. Mokhov… in Journal of Experimental and Theoretical Ph… (2005)

  9. No Access

    Article

    Electron paramagnetic resonance in neutron-transmutation-doped semiconductors with a changed isotopic composition

    Potential applications of electron paramagnetic resonance (EPR) for investigating and controlling the process of neutron transmutation do** (NTD) of semiconducting germanium, silicon, and silicon carbide are...

    P. G. Baranov, A. N. Ionov, I. V. Il’in, P. S. Kop’ev… in Physics of the Solid State (2003)

  10. No Access

    Article

    Properties of erbium luminescence in bulk crystals of silicon carbide

    The infrared luminescence of Er3+ ions has been studied in bulk crystals of silicon carbide 6H-SiC doped with erbium in the process of their growth. The erbium centers of different symmetry in the crystals are re...

    R. A. Babunts, V. A. Vetrov, I. V. Il’in, E. N. Mokhov… in Physics of the Solid State (2000)

  11. No Access

    Article

    Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: Recent EPR studies

    EPR studies of transition-element ions in SiC and GaN and of erbium in 6H-SiC are reported. Data are presented on Sc2+ ions and scandium acceptors, and chromium and molybdenum ions in various charge states in SiC...

    P. G. Baranov, I. V. Il’in, E. N. Mokhov, V. A. Khramtsov in Physics of the Solid State (1999)

  12. No Access

    Article

    Electron paramagnetic resonance of defects with metastable properties in crystalline GaN

    An EPR study of GaN revealed the presence of defects exhibiting metastable properties. EPR spectra of two centers (ii1a and ii1b) with axial symmetry along the hexagonal axis of the crystal, which have strongly a...

    P. G. Baranov, I. V. Il’in, E. N. Mokhov, V. A. Khramtsov in Physics of the Solid State (1998)

  13. No Access

    Article

    Electron paramagnetic resonance of deep boron acceptors in 4H-SiC and 3C-SiC crystals

    EPR spectra of deep boron in 4H-SiC and 3C-SiC crystals have been observed and studied. Two sites in 4H-SiC produced deep-boron EPR signals, quasi-cubic k and hexagonal h. In both cases the deep-boron center symm...

    P. G. Baranov, I. V. Il’in, E. N. Mokhov in Physics of the Solid State (1998)

  14. No Access

    Article

    Electron paramagnetic resonance of scandium in silicon carbide

    The EPR spectra of scandium acceptors and Sc2+(3d) ions are observed in 6H-SiC crystals containing a scandium impurity. The EPR spectra of scandium acceptors are characterized by comparatively small hyperfine int...

    P. G. Baranov, I. V. Il’in, E. N. Mokhov, A. D. Roenkov… in Physics of the Solid State (1997)