48 Result(s)
within
U. Gösele
Materials Science
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Article
Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 μm Range
Transmission electron microscopy (TEM), and photoluminescence (PL) have been used to evaluate defects and the efficiency of defect-reduction techniques in structures with InAs quantum dots (QDs) for the 1.55 µ...
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Article
Electrical characterisation of UHV-bonded silicon interfaces
Direct wafer bonding can be used to mechanically and electrically connect semiconductors. In our experiments two 100 mm diameter (100) Si wafers (n-do**: 1014 cm−3) are first cleaned by standard chemical cleani...
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Article
Initial Growth Stages of Epitaxial BaTiO3 Films on Vicinal SrTiO3:Nb (001) Substrates
The growth mechanism of epitaxial BaTiO3 films on vicinal Nb-doped SrTiO3 (SrTiO3:Nb) (001) substrate surfaces was studied in terms of surface morphology, crystalline orientation, microstructure, and film/substra...
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Article
From the Mystery to the Understanding of the Self-Interstitials in Silicon
Our present knowledge on self-interstitials in silicon and the rôle these defects play under widely different experimental conditions are surveyed. In particular, the following phenomena involving self-interst...
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Article
Modeling Growth Directional Features of Silicon Nanowires Obtained Using SiO
Silicon nanowires (SiNW) grown using Si monoxide source materials are mainly oriented in the <112> direction, and some in the <110> direction. These directional features may be understood by postulating that g...
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Article
Large-area porous alumina photonic crystals via imprint method
A perfect 2D porous alumina photonic crystal with 500 nm interpore distance was fabricated on an area of 4 cm2 via imprint methods and subsequent electrochemical anodization. A 4” imprint stamp consisting of a co...
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Article
Dispersion relation of 3D photonic crystals based on macroporous silicon
Extended 3D photonic crystals based on macroporous silicon are prepared by applying a periodic variation of the illumination during photoelectrochemical etching. If the lateral pore arrangement is 2D hexagonal...
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Article
The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors
Hydrogen and/or helium implantation-induced surface blistering and layer splitting in compound semiconductors such as InP, GaAs, GaN, AlN, and ZnO are discussed. The blistering phenomenon depends on many param...
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Article
Open AccessBulk GaN Ion Cleaving
Bulk or freestanding GaN is a key material in various devices other than the blue laser diodes. However, the high cost of bulk GaN wafers severely limits the large scale exploitation of these potential technol...
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Chapter and Conference Paper
Crystal Lattice Defects in MBE Grown Si Layers Heavily Doped with Er
The main types of crystal structure defects in [Er]>2×1019 doped layers are: (i) spherical Er and (ii) ellipsoidal ErSi precipitates, as well as (iii) ErSi2 platelets on {111} planes. In the sample with [Er]=4x10
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Article
Formation of Nanovoids and Nanocolumns in High Dose Hydrogen Implanted ZnO Bulk Crystals
ZnO(0001) bulk crystals were implanted with 100 keV H2+ ions with various doses in the range of 5×1016 to 3×1017 cm-2. The ZnO crystals implanted up to a dose of 2.2×1017 cm-2 did not show any surface exfoliation...
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Article
Open AccessMiniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices
The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence m...
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Chapter and Conference Paper
TEM investigation of Si/Ge multilayer structure incorporated into MBE grown Si whiskers
The TEM was used to monitor the composition of thin Ge layers incorporated into Si nanowhiskers grown by molecular beam epitaxy (MBE) on a <111> Si substrate. The method of chemical analysis was developed for ...
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Article
Dislocation structure in low-angle interfaces between bonded Si(001) wafers
Dislocation structures of interfaces between bonded (001) Si wafers with co-existing low-angle twist and tilt misorientations were studied by transmission electron microscopy. At dominating twist, a square scr...
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Article
Investigations of Mesoscopic Ferroelectric Structures Prepared by Imprint Lithography
Arrays of mesoscopic ferroelectric PZT structures with lateral sizes from several micrometers down to below 300 nm were prepared applying nanoimprint lithography. The ferroelectric properties of the mesoscopic...
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Article
Growth, Structure, and Properties of Uniformlya-Axis Oriented Ferroelectric Bi3.25La0.75Ti3O12 Thin Films on Si(100) Substrates
Uniformlya-axis-oriented, epitaxially twinned Bi3.25La0.75Ti3O12 (BLT) thin films having the major spontaneous polarization entirely along the film normal were grown by pulsed laser deposition on yttria-stabilize...
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Article
Growth, Structure, and Properties of Uniformly a-Axis Oriented Ferroelectric Bi3.25La0.75Ti3O12 Thin Films on Si(100) Substrates
Uniformly a-axis-oriented, epitaxially twinned Bi3.25La0.75Ti3O12 (BLT) thin films having the major spontaneous polarization entirely along the film normal were grown by pulsed laser deposition on yttria-stabiliz...
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Article
Magnetic Properties of 100 NM-Period Nickel Nanowire Arrays Obtained from Ordered Porous-Alumina Templates
Ni nanowires were grown in highly-ordered anodic alumina templates using pulsed electrodeposition. This technique yields completely metal-filled alumina membranes. The magnetic behavior of 100 nm period arrays...
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Article
Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures
Epitaxial Si/InAs/Si heterostructure grown on (001) Si substrate by molecular beam epitaxy (MBE) and annealed at 800°C, and 880°C were investigated by High Resolution Transmission Electron Microscopy (HRTEM). ...
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Article
InAs Nanostructures in a Silicon Matrix: Growth and Properties
Under certain growth conditions InAs/Si heteroepitaxial growth proceeds via Stranski-Krastanow or Volmer-Weber growth modes depending on the growth parameters. Critical thickness at which three dimensional InA...
