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  1. No Access

    Chapter

    Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates

    A key challenge in the engineering of Ge MOSFETs is to develop a proper Ge surface passivation technique prior to high-κ dielectric deposition to obtain low interface state density and high carrier mobility. A...

    M. Meuris, B. De Jaeger, J. Van Steenbergen in Advanced Gate Stacks for High-Mobility Sem… (2007)

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    Chapter

    Advanced High-Mobility Semiconductor-on-Insulator Materials

    Silicon-on-Insulator (SOI) is today the substrate of choice for several applications. In order to boost further circuit performance, new solutions are being explored. In particular, increasing the charge carri...

    B. Ghyselen, I. Cayrefourcq, M. Kennard in Advanced Gate Stacks for High-Mobility Sem… (2007)

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    Article

    An irreversible disappearance of the mechanical loss peak of an yttria-doped silicon nitride

    The internal friction of a silicon nitride with a sintering aud of yttrium oxide was measured from room temperature to 1400 °C. A mechanical loss peak was typically observed at 1000 °C on heating the as-sinter...

    T. Akatsu, Y. Kawakami, Y. Tanabe, E. Yasuda in Journal of Materials Research (2004)

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    Article

    Dislocation structure in low-angle interfaces between bonded Si(001) wafers

    Dislocation structures of interfaces between bonded (001) Si wafers with co-existing low-angle twist and tilt misorientations were studied by transmission electron microscopy. At dominating twist, a square scr...

    T. Akatsu, R. Scholz, U. Gösele in Journal of Materials Science (2004)

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    Article

    Linear strain hardening in elastoplastic indentation contact

    Finite-element analyses for elastoplastic cone indentations were conducted in which the effect of linear strain hardening on indentation behavior was intensively examined in relation to the influences of the f...

    M. Sakai, T. Akatsu, S. Numata, K. Matsuda in Journal of Materials Research (2003)

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    Article

    New layer transfers obtained by the SmartCut process

    The SmartCut process was first developed to obtain silicon-on-insulator (SOI) materials. Now an industrial process, the main Unibond SOI-structure trends are reported in this paper. Many material combinations ...

    H. Moriceau, F. Fournel, B. Aspar, B. Bataillou in Journal of Electronic Materials (2003)

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    Chapter

    Mechanical Properties of Carbon-Carbon Composites

    Carbon fibre reinforced carbon-matrix composites (C/C) are now applied as structural materials in aerospace applications and in the space plane because of their high specific strength and specific modulus. C/C...

    E. Yasuda, T. Akatsu, Y. Ishiguro in Design and Control of Structure of Advance… (2001)

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    Article

    Divorced eutectic and interface characteristics in a solidified YAG-spinel composite with spinel-rich composition

    Solidified microstructures of YAG (Y3Al5O12)-spinel (MgAl2O4) composite with spinel-rich composition (YAG : spinel = 1 : 30 molar ratio) were investigated. Intergranular YAG divorced eutectic exhibiting fine-grai...

    S. Wang, T. Akatsu, Y. Tanabe, E. Yasuda in Journal of Materials Science (2000)

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    Article

    Large-area wafer bonding of GaAs using hydrogen and ultrahigh vacuum atmospheres

    Uniform direct or fusion wafer bonding of GaAs wafers up to 4 inch in diameter was achieved by means of two methods: (i) pre-heating, bonding at elevated temperatures and post-annealing in a H2 atmosphere (gas en...

    G. Kästner, T. Akatsu, S. Senz, A. Plössl, U. Gösele in Applied Physics A (2000)

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    Article

    Atomic structure of Al/Al interface formed by surface activated bonding

    Single crystalline Al crystals were bonded via surface activated bonding at room temperature with the crystallographic orientation of (111)∥(111) and [110]∥[110]. The interfacial microstructure was investigate...

    T. Akatsu, N. Hosoda, T. Suga, M. Rühle in Journal of Materials Science (1999)

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    Article

    Metastable precipitation in isothermally solidified YAG-alumina composites with off-eutectic composition

    YAG-alumina composites with Al2O3-rich and YAG-rich compositions were prepared by annealing the hot-pressed composites at the eutectic temperature (1820°C) for 1 h followed by cooling down at 10 or 100°C/min in a...

    S. Wang, F. Yamamoto, T. Akatsu, Y. Tanabe, E. Yasuda in Journal of Materials Science (1999)

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    Article

    Metastable precipitation of YAIO3 in isothermally solidified YAG/(Al2O3-rich) spinel composites

    Phase composition and microstructure of isothermally solidified YAG/spinel (or Al2O3-rich solid solution) composites were investigated. It was verified that an equilibrium binary eutectic phase region consisti...

    S. Wang, F. Yamamoto, T. Akatsu, Y. Tanabe, E. Yasuda in Journal of Materials Science (1998)

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    Article

    Anisotropy of creep deformation rate in hot-pressed Si3N4 with preferred orientation of the elongated grains

    Compressive creep deformation of hot-pressed silicon nitride with two different preorientations of grain was investigated at temperatures in the range of 1300–1400 °C under 30–100 MPa. The stress exponent of t...

    S. Y Yoon, T Akatsu, E Yasuda in Journal of Materials Science (1997)

  14. No Access

    Article

    Shear strength of C/C composites containing an inorganic compound effective for anti-oxidation

    Abstracts are not published in this journal

    Y. Tanabe, Y. Hotta, T. Akatsu, S. Yamada in Journal of Materials Science Letters (1997)

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    Article

    Microstructure and strength of Al-sapphire interface by means of the surface activated bonding method

    Sapphire (α–Al2O3) and Al were joined by means of the surface activated bonding (SAB) method in an ultrahigh vacuum at room temperature. Tensile tests have shown that failure occurred not along the interface but ...

    T. Akatsu, G. Sasaki, N. Hosoda, T. Suga in Journal of Materials Research (1997)

  16. No Access

    Chapter

    Mechanical Properties of SiC Whisker / Si3N4 Composite Prepared by an in-situ Method

    During the last decade, we have investigated the in-situ whiskerization of SiC in the Si3N4 matrix, for the purpose, not only of improving the homogeneity of composite formed, but also of avoiding direct handling...

    S. Yamada, Y. Koyama, T. Tada, E. Yasuda in Engineering Ceramics ’96: Higher Reliabili… (1997)

  17. Article

    A nationwide epidemiological survey of spinal cord injuries in Japan from January 1990 to December 1992

    This survey of traumatic spinal cord injuries in Japan from January 1990 to December 1992 was carried out by a statistical method of the nationwide epidemiological study. The number of the registered patients ...

    H Shingu, M Ohama, T Ikata, S Katoh, T Akatsu in Spinal Cord (1995)

  18. Article

    Selective intrathecal phenol block to improve activities of daily living in patients with spastic quadriplegia. A preliminary report

    To eliminate severe leg spasms of 15 quadriplegics, 0.3 ml 10% phenol-glycerin was injected into the subarachnoid space at the T12/L1 interspace. The effectiveness for leg spasm was evaluated by the Penn spast...

    E Iwatsubo, E Okada, T Takehara, K Tamada, T Akatsu in Spinal Cord (1994)

  19. Article

    Spinal cord injuries in Japan: a nationwide epidemiological survey in 1990

    To survey the situation of traumatic spinal cord injuries (SCI) in Japan, the SCI Prevention Committee of the Japanese Medical Society of Paraplegia sent out by mail study charts in the form of questionnaires...

    H Shingu, T Ikata, S Katoh, T Akatsu in Spinal Cord (1994)

  20. Article

    Over-distension therapy of the bladder in paraplegic patients using self-catheterisation: a preliminary study

    Over-distension therapy was performed in 60 patients during the period of spinal shock after complete spinal cord injury.

    E Iwatsubo, S Komine, H Yamashita, A Imamura, T Akatsu in Spinal Cord (1984)