Skip to main content

57 Result(s)

within N. D. Zakharov Remove this filter

previous disabled Page of 3
and

  1. No Access

    Article

    A new approach to the diagnostics of nanoislands in Ge x Si1 − x /Si heterostructures by secondary ion mass spectrometry

    A new approach to the diagnostics of Ge x Si1 − x /Si heterostructures with self-assembled nanoislands, which is based on the method of secondary ion mass spectro...

    M. N. Drozdov, Yu. N. Drozdov, N. D. Zakharov, D. N. Lobanov… in Technical Physics Letters (2014)

  2. No Access

    Article

    Use of related parameters in X-ray diffraction analysis of multilayer structures with allowance for the layer growth time

    A new approach to analyzing the X-ray diffraction spectra of multilayer structures is described. This approach is based on information on the layer growth time. As compared to the standard analysis, the number...

    P. A. Yunin, Yu. N. Drozdov, M. N. Drozdov, A. V. Novikov… in Technical Physics (2014)

  3. No Access

    Article

    Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands

    The results of investigation of the electroluminescence of multilayer p-i-n structures with Ge(Si)/Si(001) self-assembled islands are presented. The nonmonotonic dependence of the room-temperature intensity of th...

    D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, M. V. Shaleev… in Semiconductors (2012)

  4. No Access

    Article

    Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix

    InGaAs/GaAs and Ge/Si light-emitting heterostructures with active regions consisting of a system of different-size nanoobjects, i.e., quantum dot layers, quantum wells, and a tunneling barrier are studied. The...

    V. G. Talalaev, A. A. Tonkikh, N. D. Zakharov, A. V. Senichev, J. W. Tomm… in Semiconductors (2012)

  5. No Access

    Article

    Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 μm Range

    Transmission electron microscopy (TEM), and photoluminescence (PL) have been used to evaluate defects and the efficiency of defect-reduction techniques in structures with InAs quantum dots (QDs) for the 1.55 µ...

    N. D. Zakharov, P. Werner, U. Gösele, N. N. Ledentsov… in MRS Online Proceedings Library (2011)

  6. No Access

    Article

    Lattice Defects in Epitaxial Ba2Bi4Ti5O18 Thin Films Grown by Pulsed Laser Deposition Onto LaNiO3 Bottom Electrodes

    Epitaxial, ferroelectric Ba2Bi4Ti5O18 films grown on LaNiO3/CeO2/ZrO2:Y2O3 epitaxial layers on Si(100) are investigated by cross-section high-resolution transmission electron microscopy (HRTEM). The films are per...

    N. D. Zakharov, A. R. James, A. Pignolet, S. Senz… in MRS Online Proceedings Library (2011)

  7. No Access

    Article

    Three Dimensional Structure of UMo8O26: Ordering of U-Vacancies

    The structure and composition of UMo8O26 synthesized by solid state reaction method have been investigated by High Resolution Transmission Electron Microscopy (HRTEM), Selected Area Electron Diffraction, and EDX ...

    N. D. Zakharov, P. Werner in MRS Online Proceedings Library (2011)

  8. No Access

    Article

    InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics

    Methods of optical spectroscopy and electron microscopy have been used to study tunnel-injection nanostructures the active region of which consisted of an upper In0.15Ga0.85 As quantum-well layer and a lower laye...

    V. G. Talalaev, A. V. Senichev, B. V. Novikov, J. W. Tomm, T. Elsaesser… in Semiconductors (2010)

  9. Article

    Open Access

    Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature

    The electroluminescence (EL) of multilayered p-i-n structures with the self-assembled Ge(Si)/Si(001) islands are investigated. It is found that the structures with islands grown at 600°C have the highest intensit...

    D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, D. V. Shengurov… in Semiconductors (2009)

    Download PDF (260 KB)

  10. No Access

    Article

    Wannier-stark effect in Ge/Si quantum dot superlattices

    Deep level transient spectroscopy (DLTS) measurements were performed to study electron emission from quantum states in a 20-layer Ge quantum-dot superlattice (QDSL) in a Ge/Si p-n heterostructure. It was establis...

    M. M. Sobolev, G. É. Cirlin, A. A. Tonkikh, N. D. Zakharov in Semiconductors (2008)

  11. No Access

    Chapter and Conference Paper

    Ferroelectric materials and structures suitable for data storage: The role of microscopies in establishing preparation-microstructure-property relations

    Among the various possible routes towards solid-state non-volatile random access memories (NV-RAMs) of high memory density, ferroelectric random access memories (FRAMs) offer very good prospects. Non-volatilit...

    D. Hesse, M. Alexe, K. Boldyreva, H. Han… in EMC 2008 14th European Microscopy Congress… (2008)

  12. No Access

    Chapter and Conference Paper

    Crystal Lattice Defects in MBE Grown Si Layers Heavily Doped with Er

    The main types of crystal structure defects in [Er]>2×1019 doped layers are: (i) spherical Er and (ii) ellipsoidal ErSi precipitates, as well as (iii) ErSi2 platelets on {111} planes. In the sample with [Er]=4x10

    N D Zakharov, P Werner, V I Vdovin… in Microscopy of Semiconducting Materials 2007 (2008)

  13. No Access

    Article

    Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots

    A mathematical model is proposed for describing the temperature dependence of the photoluminescence spectrum of self-ordered arrays of quantum dots with due regard for the electron-phonon interaction and diffe...

    M. B. Smirnov, V. G. Talalaev, B. V. Novikov, S. V. Sarangov… in Physics of the Solid State (2007)

  14. No Access

    Article

    Resonances related to an array of InAs quantum dots and controlled by an external electric field

    Photoluminescence of multilayer structures with InAs quantum dots grown in the p-n junction in GaAs by molecular-beam epitaxy is studied. Formation of vertical columns of quantum dots is verified by the data of t...

    V. G. Talalaev, B. V. Novikov, A. S. Sokolov, I. V. Strom, J. W. Tomm… in Semiconductors (2007)

  15. Article

    Open Access

    Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

    The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence m...

    V.G. Talalaev, G.E. Cirlin, A.A. Tonkikh, N.D. Zakharov… in Nanoscale Research Letters (2006)

    Download PDF (1309 KB) View Article

  16. No Access

    Article

    The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy

    The structural and optical properties of arrays of InAs quantum dots grown on GaAs substrates at relatively low temperatures (250 and 350°C) and with various degrees of misorientation of the surface are studie...

    A. A. Tonkikh, G. E. Cirlin, N. K. Polyakov, Yu. B. Samsonenko… in Semiconductors (2006)

  17. No Access

    Article

    The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots

    The energy band diagram of the multilayered Ge0.8Si0.2/Ge0.1Si0.9 heterostructures with vertically correlated quantum dots is analyzed theoretically. With regard to fluctuations of the thickness layer in the colu...

    N. V. Sibirev, V. G. Talalaev, A. A. Tonkikh, G. E. Cirlin… in Semiconductors (2006)

  18. No Access

    Article

    Light-emitting Si: Er structures prepared by molecular-beam epitaxy: Structural defects

    The structural defects in silicon layers grown by molecular-beam epitaxy and doped with erbium up to concentrations [Er] = 4 × 1019 cm−3 are studied using transmission electron microscopy and high-resolution elec...

    V. I. Vdovin, P. Verner, N. D. Zakharov, D. V. Denisov… in Physics of the Solid State (2005)

  19. No Access

    Article

    Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules

    Spectra of intraband absorption of polarized mid-IR light were investigated in undoped, p-, and n-doped InAs/GaAs quantum dots (QDs) covered with an InGaAs layer. Optical matrix elements for intraband electron an...

    L. E. Vorob’ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov… in Semiconductors (2005)

  20. No Access

    Article

    The engineering and properties of InAs quantum dot molecules in a GaAs matrix

    Arrays of InAs quantum dot (QD) molecules in the GaAs matrix, which consist of pairs of vertically aligned InAs QDs, have been synthesized by molecular beam epitaxy. A study of the resulting structures by tran...

    Yu. B. Samsonenko, G. E. Cirlin, A. A. Tonkikh, N. K. Polyakov… in Semiconductors (2005)

previous disabled Page of 3