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InAs Nanostructures in a Silicon Matrix: Growth and Properties

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Abstract

Under certain growth conditions InAs/Si heteroepitaxial growth proceeds via Stranski-Krastanow or Volmer-Weber growth modes depending on the growth parameters. Critical thickness at which three dimensional InAs islands start to appear at the Si(100) surface is within the range of 0.7–4.0 monolayers (substrate temperature range is 350°C–430°C). Their size depends critically on the growth conditions and is between 5 nm and 80 nra (uncapped islands). Critical lateral size of the coherent (Si capped) dislocation-free island is equal to 2-5 nm depending on the island height. Islands having larger size are dislocated. Optical properties of InAs nanoscale islands capped with Si reveal a luminescence band in the 1.3 µm region.

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Acknowledgments

The authors thanks to N. P. Korneeva, V. N. Demidov, S. A. Masalov and V. M. Busov for assistance during experiments. This work was supported by INT AS Grant No. 96-0242, Russian Foundation for Basic Research Grant No 98-02-18317 and Grant No 99-02-16799, Russian Scientific Programmes “Physics of Solid State nanostructures” Grant No 98-2029 and “Methods and Devices of Micro- and Nanoelectronics” Grant No 02.04.5.1.40.E.46. G.E.Cirlin is grateful to the NATO “Science for Peace” Program (Grant No Sfp — 972484).

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Authors and Affiliations

  1. Institute for Analytical Instrumentation RAS, St.Petersburg, Russia

    G. E. Cirlin, Va. Egorov, V. N. Petrov, Ao. Golubok, N. I. Komyak, N. K. Polyakov & Yu. B. Samsonenko

  2. A. F. Ioffe Physico-Technical Institute RAS, St. Petersburg, Russia

    G. E. Cirlin, N. K. Polyakov, Yu. B. Samsonenko, D. V. Denisov, B. V. Volovik, V. M. Ustinov, Zh. I. Alferov & N. N. Ledentsov

  3. Technical University, Berlin, Germany

    N. N. Ledentsov, R. Heitz & D. Bimberg

  4. Max-Plank-Institute for Microstructure Physics, Halle/Saale, Germany

    N. D. Zakharov, P. Werner & U. Gösele

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  1. G. E. Cirlin
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  2. Va. Egorov
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  9. B. V. Volovik
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  10. V. M. Ustinov
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  11. Zh. I. Alferov
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  12. N. N. Ledentsov
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  13. R. Heitz
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Cirlin, G.E., Egorov, V., Petrov, V.N. et al. InAs Nanostructures in a Silicon Matrix: Growth and Properties. MRS Online Proceedings Library 583, 51–55 (1999). https://doi.org/10.1557/PROC-583-51

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  • DOI: https://doi.org/10.1557/PROC-583-51

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