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  1. Article

    Open Access

    Real-space observation of ferroelectrically induced magnetic spin crystal in SrRuO3

    Unusual features in the Hall Resistivity of thin film systems are frequently associated with whirling spin textures such as Skyrmions. A host of recent investigations of Hall Hysteresis loops in SrRuO3 heterostru...

    S. D. Seddon, D. E. Dogaru, S. J. R. Holt, D. Rusu in Nature Communications (2021)

  2. Article

    Open Access

    Ultrafast current imaging by Bayesian inversion

    Spectroscopic measurements of current–voltage curves in scanning probe microscopy is the earliest and one of the most common methods for characterizing local energy-dependent electronic properties, providing i...

    S. Somnath, K. J. H. Law, A. N. Morozovska, P. Maksymovych, Y. Kim in Nature Communications (2018)

  3. Article

    Open Access

    Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films

    Two Pb(Zr0.20Ti0.80)O3 samples of different thickness and domain configuration have been studied. The c-domain sample was found to have a higher coercive field E c ...

    C. Borderon, A. E. Brunier, K. Nadaud, R. Renoud, M. Alexe in Scientific Reports (2017)

  4. No Access

    Article

    Reversible electrical switching of spin polarization in multiferroic tunnel junctions

    Magnetic tunnel junctions play an important role in controlling electron spin in spintronic devices. The reversible, remanent switching of electron-spin polarization in multiferroic tunnel junctions now enable...

    D. Pantel, S. Goetze, D. Hesse, M. Alexe in Nature Materials (2012)

  5. Article

    A photoferroelectric material is more than the sum of its parts

    J. Kreisel, M. Alexe, P. A. Thomas in Nature Materials (2012)

  6. No Access

    Article

    Transfer and handling of thin semiconductor materials by a combination of wafer bonding and controlled crack propagation

    Direct waferbonding is an appropriate technology to join two or more wafers of the same or of different materials. Waferbonding can be used to stiffen thin wafers during fabrication. However, conventional fabr...

    J. Bagdahn, D. Katzer, M. Petzold, M. Wiemer, M. Alexe in MRS Online Proceedings Library (2011)

  7. No Access

    Article

    Initial Growth Stages of Epitaxial BaTiO3 Films on Vicinal SrTiO3:Nb (001) Substrates

    The growth mechanism of epitaxial BaTiO3 films on vicinal Nb-doped SrTiO3 (SrTiO3:Nb) (001) substrate surfaces was studied in terms of surface morphology, crystalline orientation, microstructure, and film/substra...

    A. Visinoiu, M. Alexe, H. N. Lee, D. N. Zakharov in MRS Online Proceedings Library (2011)

  8. No Access

    Article

    Structural Quality And Electrical Behavior Of Epitaxial High-κ Y2O3 / Si(001)

    Y2O3 thin films were grown directly on Si (001) by MBE and annealed in-situ under UHV at various annealing temperatures. The samples were investigated in-situ by RHEED and ex-situ by HRTEM. A 7 to 15 Å thick non-...

    G. Vellianitis, G. Apostolopoulos, A. Dimoulas in MRS Online Proceedings Library (2011)

  9. No Access

    Article

    Optical properties of epitaxial BiFeO3 thin films

    Optical properties of epitaxial BiFeO3 thin films grown via pulsed-laser deposition on (110) DyScO3 substrates have been investigated. Their near-normal spectroscopic reflectivity was measured in the spectral ran...

    V. Železný, D. Chvostová, L. Pajasová, I. Vrejoiu, M. Alexe in Applied Physics A (2010)

  10. Article

    Open Access

    Structural defects and local chemistry across ferroelectric–electrode interfaces in epitaxial heterostructures

    We present a detailed investigation of the chemistry at the growth interface between the bottom electrode and ferroelectric film in (001)-oriented epitaxial ferroelectric thin-film heterostructures. Three diff...

    M. Arredondo, M. Saunders, A. Petraru, H. Kohlstedt in Journal of Materials Science (2009)

  11. Article

    Open Access

    Fabrication of epitaxial nanostructured ferroelectrics and investigation of their domain structures

    Nanostructured ferroelectrics are important objects for studies on ferroelectric size effects as well as for applications to memory devices with ultra-high memory density. In the present article, we introduce ...

    H. Han, K. Lee, W. Lee, M. Alexe, D. Hesse, S. Baik in Journal of Materials Science (2009)

  12. Article

    Open Access

    Influence of long-range dipolar interactions on the phase stability and hysteresis shapes of ferroelectric and antiferroelectric multilayers

    Phase transition and field driven hysteresis evolution of a two-dimensional Ising grid consisting of ferroelectric–antiferroelectric multilayers that take into account the long range dipolar interactions were ...

    I. B. Misirlioglu, L. Pintilie, M. Alexe, D. Hesse in Journal of Materials Science (2009)

  13. Article

    Open Access

    Ultrafast structural dynamics of perovskite superlattices

    Femtosecond x-ray diffraction provides direct insight into the ultrafast reversible lattice dynamics of materials with a perovskite structure. Superlattice (SL) structures consisting of a sequence of nanometer...

    M. Woerner, C. v. Korff Schmising, M. Bargheer, N. Zhavoronkov in Applied Physics A (2009)

  14. No Access

    Chapter and Conference Paper

    Ultrafast Structural Dynamics of Polar Solids Studied by Femtosecond X-Ray Diffraction

    We discuss recent progress in ultrafast x-ray diffraction, addressing photoinduced structural dynamics in ferroelectric superlattices and polar molecular crystals. Elongations of coupled phonon modes affecting...

    T. Elsaesser, C. von Korff Schmising, N. Zhavoronkov in Ultrafast Phenomena XVI (2009)

  15. No Access

    Chapter and Conference Paper

    Femtosecond X-ray Diffraction Study of the Ultrafast Coupling between Magnetization and Structure in the Ferromagnet SrRuO3

    Femtosecond optical excitation of magnetically ordered SrRuO3 nanolayers leads to an ultrafast demagnetization and a concomitant magnetoelastic contractive stress. The resulting ultrafast structural response of t...

    C. v Korff Schmising, M. Bargheer, A. Harpoeth, N. Zhavoronkov in Ultrafast Phenomena XVI (2009)

  16. No Access

    Chapter and Conference Paper

    Diffraction contrast imaging and high resolution transmission electron microscopy of multiferroic thin films and heterostructures

    Multiferroic materials exhibit simultaneous ferroelectric and ferromagnetic properties and are extensively studied because of their potential applications in multifunctional devices as well as for the understa...

    B. I. Birajdar, I. Vrejoiu, X. S. Gao in EMC 2008 14th European Microscopy Congress… (2008)

  17. No Access

    Chapter and Conference Paper

    Ferroelectric materials and structures suitable for data storage: The role of microscopies in establishing preparation-microstructure-property relations

    Among the various possible routes towards solid-state non-volatile random access memories (NV-RAMs) of high memory density, ferroelectric random access memories (FRAMs) offer very good prospects. Non-volatilit...

    D. Hesse, M. Alexe, K. Boldyreva, H. Han in EMC 2008 14th European Microscopy Congress… (2008)

  18. No Access

    Article

    Accurate time delay determination for femtosecond X-ray diffraction experiments

    We report on a versatile and accurate method for determining the time delay between femtosecond X-ray and optical pulses in an optical pump/X-ray diffraction probe experiment. Upon excitation with moderate pum...

    C. von Korff Schmising, M. Bargheer, M. Kiel, N. Zhavoronkov in Applied Physics B (2007)

  19. No Access

    Chapter and Conference Paper

    Probing strain propagation in nanolayered perovskites by diffraction of femtosecond x-rays

    Propagating strain waves in SrTiO3, launched from PbZr0.2Ti0.8O3 films are measured by time-resolved x-ray diffraction. X-ray interference among contributions from differently strained regions allow to determine ...

    C. v. Korff Schmising, M. Bargheer, M. Kiel, N. Zhavoronkov in Ultrafast Phenomena XV (2007)

  20. No Access

    Article

    Electrical behavior of size-controlled Si nanocrystals arranged as single layers

    A metal–oxide–semiconductor structure containing a single layer of size-controlled silicon nanocrystals embedded into gate oxide was fabricated. Size control for the silicon nanocrystals was realized by using ...

    T.Z. Lu, J. Shen, B. Mereu, M. Alexe, R. Scholz, V. Talalaev in Applied Physics A (2005)

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