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  1. No Access

    Article

    Terahertz Time-Domain Spectroscopy and Dispersive Fourier Transform Spectroscopy: Two Sides of the Same Coin

    The parallels between terahertz time-domain spectroscopy (THz-TDS) and discrete Fourier transform spectroscopy (DFTS) are unraveled by showing that the same Fresnel equation links the optical properties of a m...

    B. N. Carnio, O. Moutanabbir, A. Y. Elezzabi in Journal of Infrared, Millimeter, and Terah… (2023)

  2. Article

    Open Access

    Intra-pulse difference frequency generation in ZnGeP2 for high-frequency terahertz radiation generation

    The highly-nonlinear chalcopyrite crystal family has experienced remarkable success as source crystals in the mid-infrared spectral range, such that these crystals are primary candidates for producing high ter...

    B. N. Carnio, M. Zhang, K. T. Zawilski, P. G. Schunemann… in Scientific Reports (2023)

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  3. No Access

    Article

    The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors

    Hydrogen and/or helium implantation-induced surface blistering and layer splitting in compound semiconductors such as InP, GaAs, GaN, AlN, and ZnO are discussed. The blistering phenomenon depends on many param...

    R. Singh, S. H. Christiansen, O. Moutanabbir, U. Gösele in Journal of Electronic Materials (2010)

  4. Article

    Open Access

    Bulk GaN Ion Cleaving

    Bulk or freestanding GaN is a key material in various devices other than the blue laser diodes. However, the high cost of bulk GaN wafers severely limits the large scale exploitation of these potential technol...

    O. Moutanabbir, U. Gösele in Journal of Electronic Materials (2010)

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  5. No Access

    Article

    The fluence effect in hydrogen-ion cleaving of silicon at the sub-100-nm scale

    The implementation at the sub-100-nm scale of ion cleaving requires ion beams of ∼5 keV/amu or less. The blistering efficiency in 5-keV H-ion-implanted and annealed Si has been found to peak and vanish in a na...

    O. Moutanabbir, B. Terreault, M. Chicoine, F. Schiettekatte in Applied Physics A (2005)

  6. No Access

    Article

    Isotope and Dose Effects in Low-Energy H/D Blistering of Silicon: Narrow Operational Window for Ion-Cutting at < 100 nm

    Hydrogen ion blistering has applications in the fabrication of silicon-on-insulator and other devices. Si (001) samples implanted with different fluences of 5 keV H or D ions were rapidly thermal annealed unde...

    O. Moutanabbir, B. Terreault, E. Shaffer, G. G. Ross in MRS Online Proceedings Library (2003)