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From the Mystery to the Understanding of the Self-Interstitials in Silicon

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Abstract

Our present knowledge on self-interstitials in silicon and the rôle these defects play under widely different experimental conditions are surveyed. In particular, the following phenomena involving self-interstitials either in supersaturations or under high-temperature thermal-equilibrium conditions are considered: mobility-enhanced diffusion of self-interstitials below liquid-helium temperature, thermally activated diffusion of self-interstitials at inter-mediate temperatures (14O K to 600 K), concentration-enhanced diffusion of Group-III or Group-V elements in silicon at higher temperatures, and— as examples for high-temperature equilibrium phenomena — self-diffusion and diffusion of gold in silicon. This leads to the picture that the self-interstitials in silicon may occur in different electrical charge states and possess dumbbell configurations or are extended over several atomic volumes at intermediate or high temperatures, respectively.

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Authors and Affiliations

  1. Max-Planck-Institut für Metallforschung, Institut für Physik, Heisenbergstr. 1, D-7000, Stuttgart 80, Germany

    W. Frank, A. Seeger & U. Gösele

  2. Institut für Theoretische und Angewandte Physik, Universität Stuttgart, Pfaffenwaldring 57, D-7000, Stuttgart 80, Germany

    W. Frank, A. Seeger & U. Gösele

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  1. W. Frank
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  3. U. Gösele
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Frank, W., Seeger, A. & Gösele, U. From the Mystery to the Understanding of the Self-Interstitials in Silicon. MRS Online Proceedings Library 2, 31 (1980). https://doi.org/10.1557/PROC-2-31

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