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Article
Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 μm Range
Transmission electron microscopy (TEM), and photoluminescence (PL) have been used to evaluate defects and the efficiency of defect-reduction techniques in structures with InAs quantum dots (QDs) for the 1.55 µ...
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Article
Electrical characterisation of UHV-bonded silicon interfaces
Direct wafer bonding can be used to mechanically and electrically connect semiconductors. In our experiments two 100 mm diameter (100) Si wafers (n-do**: 1014 cm−3) are first cleaned by standard chemical cleani...
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Article
Initial Growth Stages of Epitaxial BaTiO3 Films on Vicinal SrTiO3:Nb (001) Substrates
The growth mechanism of epitaxial BaTiO3 films on vicinal Nb-doped SrTiO3 (SrTiO3:Nb) (001) substrate surfaces was studied in terms of surface morphology, crystalline orientation, microstructure, and film/substra...
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Article
From the Mystery to the Understanding of the Self-Interstitials in Silicon
Our present knowledge on self-interstitials in silicon and the rôle these defects play under widely different experimental conditions are surveyed. In particular, the following phenomena involving self-interst...
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Article
Modeling Growth Directional Features of Silicon Nanowires Obtained Using SiO
Silicon nanowires (SiNW) grown using Si monoxide source materials are mainly oriented in the <112> direction, and some in the <110> direction. These directional features may be understood by postulating that g...
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Article
Large-area porous alumina photonic crystals via imprint method
A perfect 2D porous alumina photonic crystal with 500 nm interpore distance was fabricated on an area of 4 cm2 via imprint methods and subsequent electrochemical anodization. A 4” imprint stamp consisting of a co...
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Article
Dispersion relation of 3D photonic crystals based on macroporous silicon
Extended 3D photonic crystals based on macroporous silicon are prepared by applying a periodic variation of the illumination during photoelectrochemical etching. If the lateral pore arrangement is 2D hexagonal...
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Article
The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors
Hydrogen and/or helium implantation-induced surface blistering and layer splitting in compound semiconductors such as InP, GaAs, GaN, AlN, and ZnO are discussed. The blistering phenomenon depends on many param...
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Article
InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics
Methods of optical spectroscopy and electron microscopy have been used to study tunnel-injection nanostructures the active region of which consisted of an upper In0.15Ga0.85 As quantum-well layer and a lower laye...
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Article
Open AccessBulk GaN Ion Cleaving
Bulk or freestanding GaN is a key material in various devices other than the blue laser diodes. However, the high cost of bulk GaN wafers severely limits the large scale exploitation of these potential technol...
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Article
Open AccessErratum to On the morphological instability of silicon/silicon dioxide nanowires
A ty** error unfortunately lead to a wrong expression on page 1406 in the paragraph between equations (1) and (2).
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Article
Open AccessTiO2 microstructures by inversion of macroporous silicon using atomic layer deposition
An approach is presented which is capable of fabricating arbitrarily shaped three-dimensional microstructures. Two methods—namely, macroporous silicon and atomic layer deposition—are combined to realize struct...
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Article
Open AccessTwo-dimensional X-ray waveguides: fabrication by wafer-bonding process and characterization
The fabrication of two-dimensionally confining X-ray waveguides enables the generation of nanoscopic X-ray beams. First applications of such waveguides for lens-less holographic imaging have already been demon...
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Article
Open AccessTransition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes
The transition region width of nanowire heterojunctions and pn-junctions grown using vapor–liquid–solid (VLS) processes has been modeled. With two constituents or dopants I and II, the achievable width or abru...
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Chapter and Conference Paper
Crystal Lattice Defects in MBE Grown Si Layers Heavily Doped with Er
The main types of crystal structure defects in [Er]>2×1019 doped layers are: (i) spherical Er and (ii) ellipsoidal ErSi precipitates, as well as (iii) ErSi2 platelets on {111} planes. In the sample with [Er]=4x10
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Article
Synthesis of epitaxial Si(100) nanowires on Si(100) substrate using vapor–liquid–solid growth in anodic aluminum oxide nanopore arrays
The synthesis of epitaxial Si nanowires with growth direction parallel to Si [100] on Si(100) substrate was demonstrated using a combination of anodic aluminum oxide (AAO) template, catalytic gold film sandwic...
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Article
Chemical tension and global equilibrium in VLS nanostructure growth process: from nanohillocks to nanowires
We formulate a global equilibrium model to describe the growth of one-dimensional nanostructures in the VLS process by including also the chemical tension in addition to the physical tensions, i.e. surface ene...
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Article
Influence of the Si/SiO2 interface on the charge carrier density of Si nanowires
The electrical properties of Si nanowires covered by a SiO2 shell are influenced by the properties of the Si/SiO2 interface. This interface can be characterized by the fixed oxide charge density Qf and the interf...
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Article
Formation of Nanovoids and Nanocolumns in High Dose Hydrogen Implanted ZnO Bulk Crystals
ZnO(0001) bulk crystals were implanted with 100 keV H2+ ions with various doses in the range of 5×1016 to 3×1017 cm-2. The ZnO crystals implanted up to a dose of 2.2×1017 cm-2 did not show any surface exfoliation...
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Article
Growth peculiarities during vapor–liquid–solid growth of silicon nanowhiskers by electron-beam evaporation
One-dimensional (1D) silicon (Si) nanostructures were grown by electron-beam evaporation catalyzed by gold nanoparticles on silicon substrates following the vapor–liquid–solid growth mechanism. We report three...
