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6 Result(s)

within G. N. Mosina Remove this filter Classical and Continuum Physics Remove this filter

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  1. No Access

    Article

    Heteropolytype structures with SiC quantum dots

    Epitaxial silicon carbide layers of 3C-SiC polytype with an array of nanodimensional SiC quantum dots (QDs) have been obtained for the first time using an improved method of sublimation epitaxy in vacuum. The ...

    A. A. Lebedev, V. N. Petrov, A. N. Titkov, L. M. Sorokin… in Technical Physics Letters (2005)

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    Article

    GaN films grown by vapor-phase epitaxy in a hydride-chloride system on Si(111) substrates with AlN buffer sublayers

    Oriented GaN layers with a thickness of about 10 μm have been grown by hydride-chloride vaporphase epitaxy (HVPE) on Si(111) substrates with AlN buffer layers. The best samples are characterized by a halfwidth...

    V. N. Bessolov, V. Yu. Davydov, Yu. V. Zhilyaev… in Technical Physics Letters (2005)

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    Article

    Synthesis and structural characterization of a heterocomposition based on porous layers of SiC polytypes

    We have studied the structure of transverse cross sections of a heterocomposition consisting of porous layers of silicon carbide polytypes (substrate 6H-SiC/por-6H-SiC/epi-3C-SiC/por-3C-SiC). The epitaxial lay...

    L. M. Sorokin, G. N. Mosina, A. S. Tregubova, A. A. Lebedev… in Technical Physics Letters (2004)

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    Article

    Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate

    Transverse sections of the (11–20) cuts of a 6H-SiC substrate-porous SiC layer-epitaxial 6H-SiC layer structure were studied using electron microscopy. An intermediate layer is revealed between pores and unetc...

    L. M. Sorokin, N. S. Savkina, V. B. Shuman, A. A. Lebedev… in Technical Physics Letters (2002)

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    Article

    Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions

    The structure of (p)3C-SiC-(n)6H-SiC epitaxial structures obtained by sublimation epitaxy in vacuum on 6H-SiC substrates was studied by methods of X-ray topography, X-ray diffraction, and transmission electron mi...

    A. A. Lebedev, G. N. Mosina, I. P. Nikitina, N. S. Savkina… in Technical Physics Letters (2001)

  6. No Access

    Article

    Specific properties of the PZT-based thin-film capacitor structures with excess lead oxide

    The effect of excess lead oxide on the microstructure and ferroelectric properties of lead zirconate titanate (PZT) films was studied in PZT-based thin-film capacitor structures. It is shown that excess lead i...

    V. P. Afanas’ev, G. N. Mosina, A. A. Petrov, I. P. Pronin… in Technical Physics Letters (2001)