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  1. Article

    Open Access

    Vibrational density of states and thermodynamics at the nanoscale: the 3D-2D transition in gold nanostructures

    Surface enhanced Raman scattering (SERS) is generally and widely used to enhance the vibrational fingerprint of molecules located at the vicinity of noble metal nanoparticles. In this work, SERS is originally ...

    R. Carles, P. Benzo, B. Pécassou, C. Bonafos in Scientific Reports (2016)

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  2. No Access

    Article

    GaN quantum dots as charge storage elements for memory devices

    We investigated the fabrication and the memory characteristics of metal-oxide-semiconductor (MOS) capacitors with GaN quantum-dots (QDs) embedded in the gate insulator. The GaN-QDs, which act as discrete charg...

    P. Dimitrakis, P. Normand, C. Bonafos, E. Papadomanolaki… in MRS Online Proceedings Library (2012)

  3. No Access

    Article

    Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon

    We have implemented an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, {113}’s and dislocation loops) which occurs during annealing of ion implanted silicon. Our model describes th...

    A. Claverie, B. Colombeau, F. Cristiano, A. Altibelli… in MRS Online Proceedings Library (2011)

  4. No Access

    Article

    Atomistic simulations of the Ostwald ripening of Si nanoparticles ion beam synthesized in SiO2

    Most studies of Si nanocrystals ion beam synthesized in SiO2 have shown that a link exists between the observed physical properties and the characteristics of the « populations » of nanoparticles (size-distributi...

    C. Bonafos, M. Carrada, B. Colombeau, A. Altibelli… in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    Correlation between Structural and Optical Properties of Si Nanocrystals in SiO2: Model for the Visible Light Emission

    The correlation between the structural and optical properties of Si nanocrystals embedded in SiO2 is the key factor to understand their emission mechanism. However, there is a great difficulty in imaging Si nanoc...

    M. López, B. Garrido, O. González, C. García… in MRS Online Proceedings Library (2011)

  6. No Access

    Article

    Multiscale 3D Patterning of Nanoparticle Assemblies for Plasmonic Devices

    We have developed a novel strategy for elaborating composite plasmonic nanomaterials in a well controlled manner. Combining several techniques commonly used in microelectronic engineering, namely sputtering de...

    R. Carles, C. Farcau, G. Benassayag, C. Bonafos, P. Benzo… in MRS Online Proceedings Library (2010)

  7. No Access

    Article

    Study of crystalline structure N-doped GeSb Phase Change Material for PCRAM applications

    100 nm-thick GeSbN films with high Sb content were investigated by XRD and TEM in order to investigate crystalline phases. We observe the crystallization of the two phases separatly. First, Sb rhomboedral crys...

    A. Bastard, S. Lhostis, C. Bonafos, S. Schamm-Chardon… in MRS Online Proceedings Library (2010)

  8. No Access

    Article

    Ultra-Low Energy Ion Implantation of Si into HfO2 and HfSiO-based Structures for Non Volatile Memory Applications

    The fabrication of Si nanocrystals (NCs) in multilayer structures based on HfO2 and alloys for memory applications is carried out using an innovative method, the ultra-low energy (1 keV) ion implantation followed...

    F. Gloux, P. E. Coulon, J. Groenen, S. Schamm-Chardon… in MRS Online Proceedings Library (2010)

  9. No Access

    Article

    Annealing effects on Si nanocrystal nonvolatile memories

    The effect of thermal treatments in oxidizing ambient on the structural and electrical properties of low-energy Si-implanted thin SiO2 layers which previously subjected or not to high temperature annealing in ine...

    Panagiotis Dimitrakis, C. Bonafos, S. Schamm-Chardon… in MRS Online Proceedings Library (2010)

  10. No Access

    Article

    Formation of Ge Nanocrystals in High-k Dielectric Layers for Memory Applications

    This paper reports on the fabrication of Ge-NCs in Al2O3 and HfO2 layers by ion-beam-synthesis for memory applications. After furnace annealing at 800°C, Ge-NCs form in Al2O3 materials as revealed by TEM and EELS...

    P. Dimitrakis, V. Ioannou-Sougleridis, P. Normand… in MRS Online Proceedings Library (2010)

  11. No Access

    Article

    HfO2-based Thin Films Deposited by RF Magnetron Sputtering

    HfO2-based layers prepared by RF magnetron sputtering were studied by X-ray diffraction, infrared absorption spectroscopy and transmission electron microscopy techniques. The effect of the deposition parameters a...

    L. Khomenkova, C. Dufour, P. E. Coulon, C. Bonafos… in MRS Online Proceedings Library (2009)

  12. No Access

    Article

    Ultra-Low energy Ion Implantation of Si into HfO2-based layers for Non Volatile Memory Applications

    The fabrication of NCs is carried out using an innovative method, ultra-low energy (≤5 keV) ion implantation (ULE-II) into thin (6-9 nm) HfO2–based layers in order to form after subsequent annealing a controlled ...

    P. E. Coulon, K. Chan Shin Yu, S. Schamm, G. Ben Assayag… in MRS Online Proceedings Library (2009)

  13. No Access

    Article

    Modelling of the oxidation of Suspended Silicon Nanowires

    The oxidation of suspended Si nanowires is studied under wet and dry conditions. The nanowire characteristics are extracted from Electron Microscopy images. In parallel, the Deal and Grove model is extended to...

    P. F. Fazzini, C. Bonafos, A. Hubert, J.-P. Colonna… in MRS Online Proceedings Library (2009)

  14. No Access

    Chapter and Conference Paper

    Low-Energy Ion-Beam-Synthesis of Semiconductor Nanocrystals in Very Thin High-k Layers for Memory Applications

    The fabrication of nanocrystals (NCs) into high-k dielectric matrices instead of SiO2 has retained particular attention for achieving NC memories with low programming voltages and improved charge retention. We pr...

    C Bonafos, S Schamm, A Mouti, P Dimitrakis… in Microscopy of Semiconducting Materials 2007 (2008)

  15. No Access

    Article

    Nanolocalized charge writing in thin SiO2 layers with embedded silicon nanocrystals under an atomic force microscope probe

    The possibility of temporally stable nanolocalized charging of thin SiO2 layers with embedded silicon nanocrystals (nc-Si) is demonstrated. The local charge writing and reading in SiO2 layers were performed using...

    M. S. Dunaevskii, A. N. Titkov, S. Yu. Larkin… in Technical Physics Letters (2007)

  16. No Access

    Article

    Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers

    The effect of annealing in diluted oxygen on the structural characteristics of thin silicon dioxide layers with embedded Si nanocrystals fabricated by ultra-low energy ion implantation (1 keV) is reported. The...

    H. Coffin, C. Bonafos, S. Schamm, N. Cherkashin… in MRS Online Proceedings Library (2004)

  17. No Access

    Article

    Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications

    In silicon nanocrystal (nc) based metal-oxide-semiconductor (MOS) memory structures a fine control of the Si nc location in the gate oxide is required for the pinpointing of optimal device architectures. In th...

    C. Bonafos, N. Cherkashin, M. Carrada, H. Coffin… in MRS Online Proceedings Library (2004)

  18. No Access

    Article

    Multi-Dot Floating-Gates in MOSFETs for Nonvolatile Memories–Their Ion Beam Synthesis and Morphology

    Scalability and performance of current flash memories can be improved substantially by novel devices based on Multi-Dot Floating Gate MOSFETs. The multi-dot layer in the very thin gate oxide can be fabricated ...

    T. Müller, K.-H. Heinig, C. Bonafos, H. Coffin… in MRS Online Proceedings Library (2003)

  19. No Access

    Article

    Extended defects in shallow implants

    Extended defects are often found after ion implantation and annealing of silicon and they are known to affect dopant diffusion. The article reviews the structure and energetics of the most often found extended...

    A. Claverie, B. Colombeau, B. de Mauduit, C. Bonafos, X. Hebras… in Applied Physics A (2003)

  20. No Access

    Article

    Correlation between Structural and Optical Properties of Si Nanocrystals in SiO2: Model for the Visible Light Emission

    The correlation between the structural and optical properties of Si nanocrystals embedded in SiO2 is the key factor to understand their emission mechanism. However, there is a great difficulty in imaging Si nanoc...

    M. López, B. Garrido, O. González, C. García… in MRS Online Proceedings Library (2001)

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