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  1. No Access

    Article

    InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)

    Lasing in the orange spectral range (599–605 nm) is demonstrated for (AlxGa1 –x)0.5In0.5P–GaAs laser diodes grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs (211)A and (322)A substrates. The active regio...

    A. M. Nadtochiy, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov… in Semiconductors (2019)

  2. No Access

    Article

    Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO2

    This paper reports on the results of the calculation of the depth distribution profiles of the concentration of the impurity implanted into an anisotropic crystalline material. The sputtering of the irradiated...

    A. A. Achkeev, R. I. Khaibullin, L. R. Tagirov, A. Mackova… in Physics of the Solid State (2011)

  3. No Access

    Article

    Determination of strain within Si1−yCy layers grown by CVD on a Si Substrate

    Gold nanoparticles are observed by high-resolution electron microscopy over a high tilt range equivalent to tomographic data acquisition. It is demonstrated how the lattice resolved contrast can be used to ide...

    N. Cherkashin, A. Gouye, F. Hue, F. Houdellier… in MRS Online Proceedings Library (2008)

  4. No Access

    Article

    Size and aerial density distributions of Ge nanocrystals in a SiO2 layer produced by molecular beam epitaxy and rapid thermal processing

    We discuss the distribution of size and aerial density of Ge nanocrystals in a metal-oxide-semiconductor (MOS) memory structure fabricated by molecular beam epitaxy combined with rapid thermal processing; the ...

    A. Kanjilal, J.L. Hansen, P. Gaiduk, A. Nylandsted Larsen, P. Normand… in Applied Physics A (2005)

  5. No Access

    Article

    Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing

    A method of forming a sheet of Ge nanocrystals in a SiO2 layer based on molecular beam epitaxy (MBE) and rapid thermal processing (RTP) is presented. The method takes advantage of the very high precision by which...

    A. Nylandsted Larsen, A. Kanjilal, J. Lundsgaard Hansen… in MRS Online Proceedings Library (2004)

  6. No Access

    Article

    Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers

    The effect of annealing in diluted oxygen on the structural characteristics of thin silicon dioxide layers with embedded Si nanocrystals fabricated by ultra-low energy ion implantation (1 keV) is reported. The...

    H. Coffin, C. Bonafos, S. Schamm, N. Cherkashin… in MRS Online Proceedings Library (2004)

  7. No Access

    Article

    Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications

    In silicon nanocrystal (nc) based metal-oxide-semiconductor (MOS) memory structures a fine control of the Si nc location in the gate oxide is required for the pinpointing of optimal device architectures. In th...

    C. Bonafos, N. Cherkashin, M. Carrada, H. Coffin… in MRS Online Proceedings Library (2004)

  8. No Access

    Article

    Multi-Dot Floating-Gates in MOSFETs for Nonvolatile Memories–Their Ion Beam Synthesis and Morphology

    Scalability and performance of current flash memories can be improved substantially by novel devices based on Multi-Dot Floating Gate MOSFETs. The multi-dot layer in the very thin gate oxide can be fabricated ...

    T. Müller, K.-H. Heinig, C. Bonafos, H. Coffin… in MRS Online Proceedings Library (2003)

  9. No Access

    Article

    On the “Life” of {113} Defects

    In this paper, we present a new set of conditions which can be used for imaging {113} defects. These conditions have the advantage of allowing the simultaneous imaging of all the variants of the defects. They ...

    N. Cherkashin, P. Calvo, F. Cristiano, B. de Mauduit… in MRS Online Proceedings Library (2003)